The effect of depletion layer on the cut off frequency of AlGaN/GaN high electron mobility transistors

R. Yahyazadeh, Z. Hashempour
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引用次数: 1

Abstract

An analytical model for I-V characteristics of AlGaN/GaN based HEMTs has been developed that is capable to predict accurately the effects of depletion layer thickness on the cut off frequency in drain currents, gate biases and gate length. Salient features of the model are incorporated of fully and partially occupied sub-bands in the interface quantum well, combined with a self-consistent solution of the Schrödinger and Poisson equations. The calculated model results are in very good agreement with existing experimental data for AlGaN/GaN based HEMTs device.
耗尽层对AlGaN/GaN高电子迁移率晶体管截止频率的影响
建立了基于AlGaN/GaN的hemt的I-V特性分析模型,该模型能够准确预测耗尽层厚度对漏极电流截止频率、栅极偏置和栅极长度的影响。该模型的显著特征是结合了界面量子阱中完全和部分占据的子带,并结合了Schrödinger和泊松方程的自一致解。模型计算结果与现有的AlGaN/GaN基HEMTs器件实验数据吻合良好。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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