Comparison of GaN-based MOS structures with different interfacial layer treatments

Abstract

In this work, C-V characteristics of MOS capacitors fabricated by depositing SiO2 by plasma-enhanced chemical-vapor-deposition at low temperature (300 °C) on an N-type GaN epitaxial layer using different technological procedures have been performed to analyze the quality and reliability of the resultant SiO2/GaN interface in MOS structures. C-V measures at different temperatures have been also performed to analyze the pyroelectric effect in all the GaN samples.