A quantum mechanical correction of classical surface potential model of MOS inversion layer

Abstract

In this paper, an analyse of variational wave function approach corrections of classical surface potential model of MOS inversion layer is presented. These solutions are based on smoothing functions and parameters. In this way an explicit surface potential versus gate voltage relations in the case of strong inversion in semiconductor is derived. Results of these models are compared with results obtained by the numerical solver of coupled Poisson-Schrodinger equations.