A. Karagounis, A. Kanapitsas, B. Kotsos, C. Tsonos, A. Polyzos, E. Petropoulou
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引用次数: 2
摘要
本文介绍了工艺故障(如参数变化和工艺变化)对低噪声放大器(LNA)的特定参数的影响，如噪声系数(NF)，线性度(1 dB CP, IP3)， s参数(S11, S21)电压输出信号。回顾显示LNA的规格和参数之间关系的数学类型是解释电路在过程移位和寄生元件存在下的行为的工具。采用90nm CMOS UMC技术设计了差分源退化LNA，以验证理论结论，并研究是否有可能在改变一个或多个参数的情况下将电路处方恢复到所需值。
The impact of process faults on specific parameters of a 2.3GHz CMOS LNA
This paper presents the impact of process faults — such as parameter variations and process variations — on specific parameters of a low noise amplifier (LNA) — like noise figure (NF), linearity (1 dB CP, IP3), S-parameters (S11, S21) voltage output signal. A review of mathematical types that shows the relations between specifications and parameters of the LNA is a tool to explain the behavior of the circuit under the presence of process shifts and parasitic elements. A differential source degeneration LNA has been designed in a 90nm CMOS UMC technology to validate the theoretical conclusions and investigate if it is possible to restore the circuit prescriptions to the desired values, varying one or more parameters.
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