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2010 27th International Conference on Microelectronics Proceedings最新文献

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Future trends in high power devices 高功率器件的未来趋势
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490532
J. Vobecký
{"title":"Future trends in high power devices","authors":"J. Vobecký","doi":"10.1109/MIEL.2010.5490532","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490532","url":null,"abstract":"Power devices for MW and GW power electronics are discussed. The most important device concepts of today are Phase Controlled Thyristor (PCT), Integrated Gate Commutated Thyristor (IGCT), Insulated Gate Bipolar Transistor (IGBT), and PIN diode. In spite of long-term intensive research of compound semiconductor materials and related devices, the world of high-power devices is dominated by silicon. In the light of this reality, the major trends in high-power electronics are discussed using some representative examples of state-of-the-art devices and showing their outlook.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121136489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
T/RH-sensitive thick-film structures for ecological control and environment monitoring 用于生态控制和环境监测的T/ rh敏感厚膜结构
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490491
O. Shpotyuk, I. Hadzaman, H. Klym, M. Brunner
{"title":"T/RH-sensitive thick-film structures for ecological control and environment monitoring","authors":"O. Shpotyuk, I. Hadzaman, H. Klym, M. Brunner","doi":"10.1109/MIEL.2010.5490491","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490491","url":null,"abstract":"T/RH-sensitive thick-film structures based on spinel-type semiconducting and dielectric ceramics of different chemical composition Cu<inf>0.1</inf>Ni<inf>0.1</inf>Co<inf>1.6</inf>Mn<inf>1.2</inf>O<inf>4</inf> (with p<sup>+</sup>-type of electrical conductivity), Cu<inf>0.1</inf>Ni<inf>0.8</inf>Co<inf>0.2</inf>Mn<inf>1.9</inf>O<inf>4</inf> (with p-type of electrical conductivity) and magnesium aluminate MgAl<inf>2</inf>O<inf>4</inf> ceramics were fabricated and studied. These elements are shown to be successfully applied for integrated T/RH-sensitive sensor structures of environmental monitoring and control.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114939105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Micromachining by maskless wet anisotropic etching {hkl} structures on {100} oriented silicon 在{100}取向硅上无掩膜湿法各向异性刻蚀{hkl}结构的微加工
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490489
V. Jović, J. Lamovec, M. Smiljanić, M. Popovic
{"title":"Micromachining by maskless wet anisotropic etching {hkl} structures on {100} oriented silicon","authors":"V. Jović, J. Lamovec, M. Smiljanić, M. Popovic","doi":"10.1109/MIEL.2010.5490489","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490489","url":null,"abstract":"The paper presents investigation of micromechanical technique using 3D anisotropically etched Si structures. Ridge-like structure oriented along (110) direction is first etched with mask following maskless etching in 25 wt. % TMAH solution in water at 80°C. The ridge structures investigated by maskless etching are convex prismatic edges included by {100} and {111} planes. Experimental results verify that the cutting planes developed at the ridge corners are {733} planes. From analytical relations applied to experiments, the ratio between the etching rates for the {733} (the fastest etching plane at the edge step) and {100} planes is found.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134225184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Drain current computation in nanoscale nMOSFETs: Comparison of transport models 纳米级nmosfet的漏极电流计算:输运模型的比较
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490539
E. Sangiorgi, C. Alexander, A. Asenov, V. Aubry-Fortuna, G. Baccarani, A. Bournel, M. Braccioli, B. Cheng, P. Dollfus, A. Esposito, D. Esseni, C. Fenouillet-Béranger, C. Fiegna, G. Fiori, A. Ghetti, G. Iannaccone, A. Martinez, B. Majkusiak, S. Monfray, P. Palestri, V. Peikert, S. Reggiani, C. Riddet, J. Saint-Martin, A. Schenk, L. Selmi, L. Silvestri, P. Toniutti, J. Walczak
{"title":"Drain current computation in nanoscale nMOSFETs: Comparison of transport models","authors":"E. Sangiorgi, C. Alexander, A. Asenov, V. Aubry-Fortuna, G. Baccarani, A. Bournel, M. Braccioli, B. Cheng, P. Dollfus, A. Esposito, D. Esseni, C. Fenouillet-Béranger, C. Fiegna, G. Fiori, A. Ghetti, G. Iannaccone, A. Martinez, B. Majkusiak, S. Monfray, P. Palestri, V. Peikert, S. Reggiani, C. Riddet, J. Saint-Martin, A. Schenk, L. Selmi, L. Silvestri, P. Toniutti, J. Walczak","doi":"10.1109/MIEL.2010.5490539","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490539","url":null,"abstract":"In this paper the modelling approaches for determination of the drain current in nanoscale MOSFETs pursued by various partners in the frame of the European Projects Pullnano and Nanosil are mutually compared in terms of drain current and internal quantities (average velocity and inversion charge). The comparison has been carried out by simulating template devices representative of 22 nm Double-Gate and 32 nm Single-Gate FD-SOI. A large variety of simulation models has been considered, ranging from drift-diffusion to direct solutions of the Boltzmann-Transport-Equation. The predictions of the different approaches for the 32 nm device are quite similar. Simulations of the 22 nm device instead, are much less consistent. Comparison with experimental data for a 32 nm device shows that the modeling approach used to explain the mobility reduction induced by the high-k dielectric is critical.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134512990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Amplification of space charge waves at very high electric fields in GaAs films 高电场作用下砷化镓薄膜中空间电荷波的放大
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490510
A. García-Barrientos, V. Palankovski, V. Grimalsky
{"title":"Amplification of space charge waves at very high electric fields in GaAs films","authors":"A. García-Barrientos, V. Palankovski, V. Grimalsky","doi":"10.1109/MIEL.2010.5490510","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490510","url":null,"abstract":"The nonlinear interaction of space charge waves including the amplification in microwave range at high electric fields (10–300 kV/cm) in n-GaAs films, possessing the negative differential conductance phenomenon, is presented. Both the amplified signal at the first harmonic of the input signal and the generation of second and third harmonics of the input signal, which are due to the negative differential resistance effect at very high electric fields are shown.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133132896","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Diffraction gratings with anticorrelated relief for new surface plasmon polariton photodetectors & sensors 新型表面等离子体偏振子光电探测器和传感器用反相关浮雕衍射光栅
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490505
N. Dmitruk, S. Mamykin, M. Sosnova, A. Korovin, V. Mynko
{"title":"Diffraction gratings with anticorrelated relief for new surface plasmon polariton photodetectors & sensors","authors":"N. Dmitruk, S. Mamykin, M. Sosnova, A. Korovin, V. Mynko","doi":"10.1109/MIEL.2010.5490505","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490505","url":null,"abstract":"In this work new method for diffraction grating formation are suggested. This method allows to produce periodically corrugated thin metal films with transmittance strongly depends on the mutual correlation of two metal film interfaces with air and semiconductor. This could be the final stage of manufacturing of this type photodetector when all elements and circuits on the chip (like CCD matrix) are already formed.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121312812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of a digital send-site synchronizing and deskewing circuit for multi-lane serial high-speed communication 用于多通道串行高速通信的数字发送端同步和去偏电路设计
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490479
Sven-Hendrik Voss, S. Weide, Ulrich Langenbach
{"title":"Design of a digital send-site synchronizing and deskewing circuit for multi-lane serial high-speed communication","authors":"Sven-Hendrik Voss, S. Weide, Ulrich Langenbach","doi":"10.1109/MIEL.2010.5490479","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490479","url":null,"abstract":"As an approach to the prevailing synchronization deficiencies inherent in skew-sensitive multi-channel high-speed data transmission the design of a digital synchronizing and deskewing circuit on the part of the transmitter side is described. It is based on a concept of accurate skew determination on the physical outputs by a chained per-lane feedback.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129332804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling of main leakage currents and their contribution to channel current in Fin-FETs fin - fet中主泄漏电流的建模及其对通道电流的贡献
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490523
I. Garduño, A. Cerdeira, M. Estrada, V. Kilchytska, D. Flandre
{"title":"Modeling of main leakage currents and their contribution to channel current in Fin-FETs","authors":"I. Garduño, A. Cerdeira, M. Estrada, V. Kilchytska, D. Flandre","doi":"10.1109/MIEL.2010.5490523","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490523","url":null,"abstract":"Gate current present in double-gate fully depleted MOSFETs can significantly contribute to its measured channel current. For this reason the presence of direct tunneling and GIDL effects on the total gate and drain currents of Fin-FETs with different dimensions is analyzed. To fulfill this task, expressions for the leakage current due to direct tunneling and GIDL effects at the metal-gate/high-k structure were established and incorporated in the Symmetric Doped Double-Gate Model (SDDGM) for MOSFETs. It is shown that both phenomena have to be taken into account for precise modeling in all the operation regions. The behavior of gate tunneling current in all regimes of operation, as a function of applied potentials and transistor physical parameters, was derived and expressed in the form on a single equation, incorporated to the SDDGM. Agreement observed between modeled and experimental transfer characteristics in inversion, depletion and accumulation region was excellent for Fin-FETs with different dimensions.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116389437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of the drain width on the electrical behavior of deep defect in AlGaN/GaN/SiC HEMTs 漏极宽度对AlGaN/GaN/SiC hemt深度缺陷电学行为的影响
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490440
O. Fathallah, M. Gassoumi, S. Saadaoui, B. Grimbert, C. Gaquière, H. Maaref
{"title":"Effects of the drain width on the electrical behavior of deep defect in AlGaN/GaN/SiC HEMTs","authors":"O. Fathallah, M. Gassoumi, S. Saadaoui, B. Grimbert, C. Gaquière, H. Maaref","doi":"10.1109/MIEL.2010.5490440","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490440","url":null,"abstract":"The transient behaviors of AlGaN/GaN HEMTs were studied by conductance deep level transient spectroscopy. Deep levels in HEMTs are known to be responsible for trapping processes like: kink effect and degradation in saturation current. Three electron traps were observed. An additional “hole-like” level with activation energy of 0.43 eV is obtained. They were attributed these levels with surface states.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"147 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115678936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Simple model for the switching I-V characteristic in electroformed MIM structures 电铸MIM结构开关I-V特性的简单模型
2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI: 10.1109/MIEL.2010.5490526
E. Miranda, D. Jiménez
{"title":"Simple model for the switching I-V characteristic in electroformed MIM structures","authors":"E. Miranda, D. Jiménez","doi":"10.1109/MIEL.2010.5490526","DOIUrl":"https://doi.org/10.1109/MIEL.2010.5490526","url":null,"abstract":"A simple analytical model for the switching I-V characteristic in electroformed metal-insulator-metal structures is reported. The transitions from the OFF state (high resistance) to the ON state (low resistance) and back are modeled using an equivalent electrical circuit model consisting in two opposite-biased diodes with a series resistance. It is shown how the I-V characteristics are achieved by means of an appropriate change of model parameters.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123731339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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