Electrical properties of Au/C60/n-Si photodiode structures with pristine and dithioloctane-functionalized C60 nanolayers

N. Dmitruk, O. Borkovskaya, D. Naumenko, E. Basiuk, Z. Horváth
{"title":"Electrical properties of Au/C60/n-Si photodiode structures with pristine and dithioloctane-functionalized C60 nanolayers","authors":"N. Dmitruk, O. Borkovskaya, D. Naumenko, E. Basiuk, Z. Horváth","doi":"10.1109/MIEL.2010.5490508","DOIUrl":null,"url":null,"abstract":"The dithioloctane-treatment of C60 film was shown to ensure the deposition on it of gold nanoparticles with the controlled size and shape leading to enhancement of the Au/C60/n-Si structure photocurrent due to the excitation of local plasmons in metal nanoparticles. In this work the detailed investigation of the electrical properties of these structures with the pristine and dithioloctane-treated C60 interlayers was made. The current-voltage and capacitance-voltage dependencies were measured in the temperature range from 80 to 320 K. The mechanisms of the current flow and their parameters were determined. It was shown, that the used of dithioloctane-treatment of C60 layer did not change the mechanisms of the in current flow in Au/C60/n-Si structure, specifically, in a decrease of the series resistance, determined by C60 layer, and in a decrease of the effective height of barrier for the reverse current flow.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 27th International Conference on Microelectronics Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIEL.2010.5490508","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

The dithioloctane-treatment of C60 film was shown to ensure the deposition on it of gold nanoparticles with the controlled size and shape leading to enhancement of the Au/C60/n-Si structure photocurrent due to the excitation of local plasmons in metal nanoparticles. In this work the detailed investigation of the electrical properties of these structures with the pristine and dithioloctane-treated C60 interlayers was made. The current-voltage and capacitance-voltage dependencies were measured in the temperature range from 80 to 320 K. The mechanisms of the current flow and their parameters were determined. It was shown, that the used of dithioloctane-treatment of C60 layer did not change the mechanisms of the in current flow in Au/C60/n-Si structure, specifically, in a decrease of the series resistance, determined by C60 layer, and in a decrease of the effective height of barrier for the reverse current flow.
原始和二硫代辛烷功能化C60纳米层Au/C60/n-Si光电二极管结构的电学性质
采用二硫代辛烷处理C60薄膜,可以保证在C60薄膜上沉积尺寸和形状可控的金纳米粒子,通过激发金属纳米粒子中的局部等离子激元增强Au/C60/n-Si结构光电流。在本工作中,详细研究了这些结构与原始和二硫代辛烷处理的C60中间层的电学性质。在80 ~ 320 K温度范围内测量了电流-电压和电容-电压的依赖关系。确定了电流流动的机理及其参数。结果表明,采用二硫代辛烷处理C60层并没有改变Au/C60/n-Si结构中电流流动的机理,而是降低了由C60层决定的串联电阻,降低了逆流的有效阻挡高度。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信