有限温度下δ掺杂量子阱的Thomas - Fermi法电子能谱

2010 27th International Conference on Microelectronics Proceedings Pub Date : 2010-05-16 DOI:10.1109/MIEL.2010.5490520

V. Grimalsky, L. M. Gaggero-S., S. Koshevaya, A. García-b.

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引用次数: 4

摘要

用Thomas - Fermi (TF)方法研究了n-GaAs中δ掺杂量子阱在有限温度下的电子能谱。该方法收敛速度快，精度高。在二维掺杂1013…2×1013 cm−2时，最简单的TF方法(T = 0)可以使用到温度T≤200k。

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Electron spectrum of δ-doped quantum wells by Thomas — Fermi method at finite temperatures

Electron spectrum of δ-doped quantum well in n-GaAs is investigated by means of Thomas — Fermi (TF) method at finite temperatures. This method shows fast convergence and good accuracy. At 2D doping 10¹³…2×10¹³ cm⁻², the simplest TF method (T = 0) can be used up till the temperatures T ≤200 K.

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2010 27th International Conference on Microelectronics Proceedings

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