V. Grimalsky, L. M. Gaggero-S., S. Koshevaya, A. García-b.
{"title":"Electron spectrum of δ-doped quantum wells by Thomas — Fermi method at finite temperatures","authors":"V. Grimalsky, L. M. Gaggero-S., S. Koshevaya, A. García-b.","doi":"10.1109/MIEL.2010.5490520","DOIUrl":null,"url":null,"abstract":"Electron spectrum of δ-doped quantum well in n-GaAs is investigated by means of Thomas — Fermi (TF) method at finite temperatures. This method shows fast convergence and good accuracy. At 2D doping 10<sup>13</sup>…2×10<sup>13</sup> cm<sup>−2</sup>, the simplest TF method (T = 0) can be used up till the temperatures T ≤200 K.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 27th International Conference on Microelectronics Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIEL.2010.5490520","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
Electron spectrum of δ-doped quantum well in n-GaAs is investigated by means of Thomas — Fermi (TF) method at finite temperatures. This method shows fast convergence and good accuracy. At 2D doping 1013…2×1013 cm−2, the simplest TF method (T = 0) can be used up till the temperatures T ≤200 K.