{"title":"Quantum mechanical tunnelling in nanoelectronic circuits: Design of a nanoelectronic single-electron RAM","authors":"Paul Isaac Hagouel, I. Karafyllidis","doi":"10.1109/MIEL.2010.5490538","DOIUrl":null,"url":null,"abstract":"Single-electronics is a nanoelectronic technology that makes possible the control of transport and position of a single or a small number of electrons. The fundamental physical principles of single-electronics are the quantum mechanical tunnelling and the Coulomb blockade. Bits of information are represented by the presence or absence of a single or a small number of electrons in conducting islands. The design and operation of two basic single-electron gates and the basic memory cell are presented. Furthermore, a single-electron random-access memory array is designed and its operation is analyzed using Monte Carlo simulation. Simulation shows that selective read and write operations can be performed in this memory array.","PeriodicalId":271286,"journal":{"name":"2010 27th International Conference on Microelectronics Proceedings","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 27th International Conference on Microelectronics Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIEL.2010.5490538","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Single-electronics is a nanoelectronic technology that makes possible the control of transport and position of a single or a small number of electrons. The fundamental physical principles of single-electronics are the quantum mechanical tunnelling and the Coulomb blockade. Bits of information are represented by the presence or absence of a single or a small number of electrons in conducting islands. The design and operation of two basic single-electron gates and the basic memory cell are presented. Furthermore, a single-electron random-access memory array is designed and its operation is analyzed using Monte Carlo simulation. Simulation shows that selective read and write operations can be performed in this memory array.