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A 4.35-mW +22-dBm IIP3 continuously tunable channel select filter for WLAN/WiMax receivers in 90-nm CMOS 4.35 mw +22 dbm IIP3连续可调通道选择滤波器，用于90纳米CMOS的WLAN/WiMax接收器
2010 IEEE Radio Frequency Integrated Circuits Symposium Pub Date : 2010-05-23 DOI: 10.1109/RFIC.2010.5477387
M. Oskooei, N. Masoumi, M. Kamarei, H. Sjoland
{"title":"A 4.35-mW +22-dBm IIP3 continuously tunable channel select filter for WLAN/WiMax receivers in 90-nm CMOS","authors":"M. Oskooei, N. Masoumi, M. Kamarei, H. Sjoland","doi":"10.1109/RFIC.2010.5477387","DOIUrl":"https://doi.org/10.1109/RFIC.2010.5477387","url":null,"abstract":"A low-power high linearity CMOS Gm-C channel select filter for WLAN/WiMax receivers in 90-nm CMOS technology is presented. To reduce power consumption a biquad cell with simple architecture and few devices is used. A simple but efficient technique is also used to improve the linearity of the filter without increasing its power consumption. The cutoff frequency of the sixth order Butterworth low-pass filter can be tuned from 8.1 to 13.5 MHz for WLAN and WiMax applications. The measurement results show an in-band IIP3 of +22 dBm and an input referred noise of 75 nV/√Hz at a power consumption of 4.35 mW from a 1-V supply. The differential filter occupies a chip area of 0.239 mm2 excluding pads.","PeriodicalId":269027,"journal":{"name":"2010 IEEE Radio Frequency Integrated Circuits Symposium","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114637335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Analysis and design of a wideband high efficiency CMOS outphasing amplifier 一种宽带高效CMOS缺相放大器的分析与设计
2010 IEEE Radio Frequency Integrated Circuits Symposium Pub Date : 2010-05-23 DOI: 10.1109/RFIC.2010.5477315
M. V. van Schie, M. van der Heijden, M. Acar, A. de Graauw, L. D. de Vreede
{"title":"Analysis and design of a wideband high efficiency CMOS outphasing amplifier","authors":"M. V. van Schie, M. van der Heijden, M. Acar, A. de Graauw, L. D. de Vreede","doi":"10.1109/RFIC.2010.5477315","DOIUrl":"https://doi.org/10.1109/RFIC.2010.5477315","url":null,"abstract":"This work presents the analysis and design of a novel transformer-based power combining network for an efficient outphasing power amplifier (PA). The proposed power combining network was implemented on PCB together with two 65nm CMOS class-E PA's. Measurements show a peak output power of more than 30dBm over a 29% bandwidth around 700MHz. The peak output power at 700MHz equals 33.9dBm. The 10dB back-off efficiency is larger than 27.3% over the same 29% bandwidth. The 6dB back-off efficiency is larger than 46.4% over this bandwidth. The drain efficiency at 650MHz is larger than 50% over a 10dB power back-off range, which is, to our best knowledge, the highest back-off efficiency reported in a CMOS outphasing PA to date.","PeriodicalId":269027,"journal":{"name":"2010 IEEE Radio Frequency Integrated Circuits Symposium","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124308546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
A 100 GHz transformer-coupled fully differential amplifier in 90 nm CMOS 90nm CMOS的100ghz变压器耦合全差分放大器
2010 IEEE Radio Frequency Integrated Circuits Symposium Pub Date : 2010-05-23 DOI: 10.1109/RFIC.2010.5477257
N. Deferm, P. Reynaert
{"title":"A 100 GHz transformer-coupled fully differential amplifier in 90 nm CMOS","authors":"N. Deferm, P. Reynaert","doi":"10.1109/RFIC.2010.5477257","DOIUrl":"https://doi.org/10.1109/RFIC.2010.5477257","url":null,"abstract":"This paper proposes differential design techniques for W-band CMOS applications. Transformers are used as passive matching circuits, which provide numerous advantages compared to traditional matching circuits. Stabilization and gain improvement of the differential pair is achieved by a wideband neutralization technique. These techniques are combined in a fully differential amplifier which is successfully measured. To our knowledge, this is the first fully differential 100 GHz CMOS amplifier.","PeriodicalId":269027,"journal":{"name":"2010 IEEE Radio Frequency Integrated Circuits Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122104299","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 34
An electronically temperature-compensated 427MHz low phase-noise AlN-on-Si micromechanical reference oscillator 一种电子温度补偿427MHz低相位噪声的硅上铝微机械参考振荡器
2010 IEEE Radio Frequency Integrated Circuits Symposium Pub Date : 2010-05-23 DOI: 10.1109/RFIC.2010.5477392
H. M. Lavasani, W. Pan, F. Ayazi
{"title":"An electronically temperature-compensated 427MHz low phase-noise AlN-on-Si micromechanical reference oscillator","authors":"H. M. Lavasani, W. Pan, F. Ayazi","doi":"10.1109/RFIC.2010.5477392","DOIUrl":"https://doi.org/10.1109/RFIC.2010.5477392","url":null,"abstract":"This paper reports on the first demonstration of series tuning for lateral micromechanical oscillators and its application in a temperature-compensated 427MHz AlN-on-Si reference oscillator. The sustaining amplifier is a 13mW tunable TIA implemented in 0.18µm CMOS that uses shunt-parasitic cancellation to increase the tuning by 12× to 810ppm. The tunable oscillator along with a 2mW on-chip temperature compensation circuit has reduced the overall frequency drift to 70ppm in −10°C to 70°C. The phase-noise of the oscillator reaches −82dBc/Hz at 1kHz offset with floor below −147dBc/Hz.","PeriodicalId":269027,"journal":{"name":"2010 IEEE Radio Frequency Integrated Circuits Symposium","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115140332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
A 90nm-CMOS, 500Mbps, fully-integrated IR-UWB transceiver using pulse injection-locking for receiver phase synchronization 90nm-CMOS, 500Mbps，完全集成IR-UWB收发器，使用脉冲注入锁定进行接收器相位同步
2010 IEEE Radio Frequency Integrated Circuits Symposium Pub Date : 2010-05-23 DOI: 10.1109/RFIC.2010.5477371
Changhui Hu, P. Chiang, Kangmin Hu, Huaping Liu, R. Khanna, J. Nejedlo
{"title":"A 90nm-CMOS, 500Mbps, fully-integrated IR-UWB transceiver using pulse injection-locking for receiver phase synchronization","authors":"Changhui Hu, P. Chiang, Kangmin Hu, Huaping Liu, R. Khanna, J. Nejedlo","doi":"10.1109/RFIC.2010.5477371","DOIUrl":"https://doi.org/10.1109/RFIC.2010.5477371","url":null,"abstract":"A fully-integrated, 3.1–5GHz Impulse-Radio UWB transceiver with on-chip flash ADC is designed in 90nm-CMOS. A new scheme for receiver phase acquisition is proposed that uses pulse injection-locking to synchronize the receive clock with the transmitted data, eliminating the need for clock/data recovery (CDR). Occupying 2mm2 die area, the transceiver achieves a maximum data rate of 500 Mbps, energy efficiency of 0.18nJ/b at 500Mbps, and a RX-BER of 10−3 across a distance of 10cm at 125Mbps.","PeriodicalId":269027,"journal":{"name":"2010 IEEE Radio Frequency Integrated Circuits Symposium","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115141450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
The “load-thru” (LT) de-embedding technique for the measurements of mm-wave balanced 4-port devices 毫米波平衡四端口器件测量的“负载直通”(LT)去嵌入技术
2010 IEEE Radio Frequency Integrated Circuits Symposium Pub Date : 2010-05-23 DOI: 10.1109/RFIC.2010.5477369
Z. Deng, A. Niknejad
{"title":"The “load-thru” (LT) de-embedding technique for the measurements of mm-wave balanced 4-port devices","authors":"Z. Deng, A. Niknejad","doi":"10.1109/RFIC.2010.5477369","DOIUrl":"https://doi.org/10.1109/RFIC.2010.5477369","url":null,"abstract":"The differential-mode behavior of a balanced 4-port device can be characterized by simple 2-port measurements if baluns are placed at both the input and the output. But the traditional insertion loss technique is not able to fully de-embed the baluns. Therefore, we propose the “load-thru” de-embedding technique which uses the differential-mode characteristics of a balun to fully extract the complete differential-mode behavior of the DUT. Theoretical analysis and mm-wave measurement verifications are provided.","PeriodicalId":269027,"journal":{"name":"2010 IEEE Radio Frequency Integrated Circuits Symposium","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115667658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
SiGe power amplifier ICs for 4G (WIMAX and LTE) mobile and nomadic applications 用于4G (WIMAX和LTE)移动和游牧应用的SiGe功率放大器ic
2010 IEEE Radio Frequency Integrated Circuits Symposium Pub Date : 2010-05-23 DOI: 10.1109/RFIC.2010.5477364
V. Krishnamurthy, K. Hershberger, B. Eplett, J. Dekosky, H. Zhao, D. Poulin, R. Rood, E. Prince
{"title":"SiGe power amplifier ICs for 4G (WIMAX and LTE) mobile and nomadic applications","authors":"V. Krishnamurthy, K. Hershberger, B. Eplett, J. Dekosky, H. Zhao, D. Poulin, R. Rood, E. Prince","doi":"10.1109/RFIC.2010.5477364","DOIUrl":"https://doi.org/10.1109/RFIC.2010.5477364","url":null,"abstract":"SiGe 4G PA development is a key element in enabling integrated 4G front end SiGe ICs. In this paper, we report on a wideband SiGe 4G PA IC which meets WIMAX (802.16e) and LTE specifications. For 802.16e, the SiGe PA produces 25 dBm linear power at Vcc=3.3V for 2.3–2.7 GHz operation with ≪4% EVM and 18% efficiency while meeting spectral mask and exhibiting −43 dBm/MHz second harmonic levels. For TD-LTE, Band 40 (2.3–2.4 GHz) and FDD-LTE, Band 7 (2.500–2.570 GHz), this SiGe PA produces 28.5 dBm linear power while meeting 3GPP spectral mask and EVM specification for QAM 16.","PeriodicalId":269027,"journal":{"name":"2010 IEEE Radio Frequency Integrated Circuits Symposium","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130081480","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
A wideband high-linearity mixer in 0.5 µm InP DHBT technology 采用0.5µm InP DHBT技术的宽带高线性混频器
2010 IEEE Radio Frequency Integrated Circuits Symposium Pub Date : 2010-05-23 DOI: 10.1109/RFIC.2010.5477287
M. Stuenkel, M. Feng
{"title":"A wideband high-linearity mixer in 0.5 µm InP DHBT technology","authors":"M. Stuenkel, M. Feng","doi":"10.1109/RFIC.2010.5477287","DOIUrl":"https://doi.org/10.1109/RFIC.2010.5477287","url":null,"abstract":"This paper presents the design, implementation and characterization of a wideband down-conversion mixer in a 0.5 µm InP DHBT process. A modified Gilbert cell topology is implemented to improve circuit linearity and to give a means by which DHBT mixers can operate at lower supply voltages. The measured circuit has a maximum conversion gain of 11.3 dB over a 3 dB bandwidth from 7 to 24 GHz. The input referred 1-dB compression point is greater than −15.6 dB across the entire frequency range.","PeriodicalId":269027,"journal":{"name":"2010 IEEE Radio Frequency Integrated Circuits Symposium","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128839334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A 28mW WCDMA/GSM/GPRS/EDGE transformer-based receiver in 45nm CMOS 一个基于45nm CMOS的28mW WCDMA/GSM/GPRS/EDGE变压器接收器
2010 IEEE Radio Frequency Integrated Circuits Symposium Pub Date : 2010-05-23 DOI: 10.1109/RFIC.2010.5477404
D. Griffith, V. Srinivasan, S. Pennisi, V. Rentala, Yu Su, S. Sankaran, I. Elahi, S. Samala, Halil Kiper, Bijit Patel, S. Akhtar, Dan Edmondson
{"title":"A 28mW WCDMA/GSM/GPRS/EDGE transformer-based receiver in 45nm CMOS","authors":"D. Griffith, V. Srinivasan, S. Pennisi, V. Rentala, Yu Su, S. Sankaran, I. Elahi, S. Samala, Halil Kiper, Bijit Patel, S. Akhtar, Dan Edmondson","doi":"10.1109/RFIC.2010.5477404","DOIUrl":"https://doi.org/10.1109/RFIC.2010.5477404","url":null,"abstract":"A transformer-based receiver designed in 45nm CMOS that meets WCDMA, GSM, GPRS, and EDGE system requirements is presented. The receiver requires no interstage SAW filters and consumes 20mA from 1.4V. The use of a transformer at the LNA output helps achieve high linearity by lowering the voltage swing while simultaneously providing current gain. The analog back end is implemented with two cascaded gain stages and a 2nd order ΣΔ ADC. The receiver has a gain of 60dB, noise figure of 3.0dB and an IIP2 of ≫+50dBm on both I+Q channels. The die area is 1.35mm2 for 4 bands.","PeriodicalId":269027,"journal":{"name":"2010 IEEE Radio Frequency Integrated Circuits Symposium","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125831816","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Dual-band CMOS transceiver with highly integrated front-end for 450Mb/s 802.11n systems 具有高度集成前端的双带CMOS收发器，适用于450Mb/s 802.11n系统
2010 IEEE Radio Frequency Integrated Circuits Symposium Pub Date : 2010-05-23 DOI: 10.1109/RFIC.2010.5477280
S. Gross, Tzvi Maimon, F. Cossoy, M. Ruberto, Georgi Normatov, Ale×ander Rivkind, N. Telzhensky, R. Banin, Ori Ashckenazi, A. Ben-Bassat, Sharon Zaguri, Gabriel Hara, Mario Zajac, Nir Shahar, S. Shahaf, Hani Yousef, E. Mor, Yishai Eilat, A. Nazimov, Zeev Beer, A. Fridman, O. Degani
{"title":"Dual-band CMOS transceiver with highly integrated front-end for 450Mb/s 802.11n systems","authors":"S. Gross, Tzvi Maimon, F. Cossoy, M. Ruberto, Georgi Normatov, Ale×ander Rivkind, N. Telzhensky, R. Banin, Ori Ashckenazi, A. Ben-Bassat, Sharon Zaguri, Gabriel Hara, Mario Zajac, Nir Shahar, S. Shahaf, Hani Yousef, E. Mor, Yishai Eilat, A. Nazimov, Zeev Beer, A. Fridman, O. Degani","doi":"10.1109/RFIC.2010.5477280","DOIUrl":"https://doi.org/10.1109/RFIC.2010.5477280","url":null,"abstract":"A 3-stream, 802.11n WLAN MIMO transceiver, with fully integrated PAs and LNAs in both 2.4GHz and 5GHz bands, and a T/R switch in the 2.4GHz band, was implemented in a standard 90nm CMOS technology. The transmitter achieves an EVM of -28dB at output power of 19dBm and 17dBm in the 2.4GHz and 5GHz bands, respectively. The transmitter power consumption per Mb of data, in 3-stream mode, is 3.7mW/Mb and 4.5mW/Mb in the 2.4GHz and 5GHz, respectively. This is four times lower comparing to the single stream (SISO) mode. The receiver NF is 4dB in both bands, and power consumption is 1.6mW/Mb and 1.7mW/Mb, in the 2.4GHz and 5GHz bands, respectively.","PeriodicalId":269027,"journal":{"name":"2010 IEEE Radio Frequency Integrated Circuits Symposium","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127474748","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
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