SiGe power amplifier ICs for 4G (WIMAX and LTE) mobile and nomadic applications

V. Krishnamurthy, K. Hershberger, B. Eplett, J. Dekosky, H. Zhao, D. Poulin, R. Rood, E. Prince
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引用次数: 14

Abstract

SiGe 4G PA development is a key element in enabling integrated 4G front end SiGe ICs. In this paper, we report on a wideband SiGe 4G PA IC which meets WIMAX (802.16e) and LTE specifications. For 802.16e, the SiGe PA produces 25 dBm linear power at Vcc=3.3V for 2.3–2.7 GHz operation with ≪4% EVM and 18% efficiency while meeting spectral mask and exhibiting −43 dBm/MHz second harmonic levels. For TD-LTE, Band 40 (2.3–2.4 GHz) and FDD-LTE, Band 7 (2.500–2.570 GHz), this SiGe PA produces 28.5 dBm linear power while meeting 3GPP spectral mask and EVM specification for QAM 16.
用于4G (WIMAX和LTE)移动和游牧应用的SiGe功率放大器ic
SiGe 4G PA的开发是实现集成4G前端SiGe ic的关键因素。在本文中,我们报告了一种满足WIMAX (802.16e)和LTE规范的宽带SiGe 4G PA IC。对于802.16e, SiGe PA在2.3-2.7 GHz工作时,在Vcc=3.3V下产生25 dBm线性功率,≪4% EVM和18%效率,同时满足频谱掩模,并显示- 43 dBm/MHz次谐波电平。对于TD-LTE, Band 40 (2.3-2.4 GHz)和FDD-LTE, Band 7 (2500 - 2.570 GHz),该SiGe PA产生28.5 dBm线性功率,同时满足3GPP频谱掩模和QAM 16的EVM规范。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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