V. Krishnamurthy, K. Hershberger, B. Eplett, J. Dekosky, H. Zhao, D. Poulin, R. Rood, E. Prince
{"title":"SiGe power amplifier ICs for 4G (WIMAX and LTE) mobile and nomadic applications","authors":"V. Krishnamurthy, K. Hershberger, B. Eplett, J. Dekosky, H. Zhao, D. Poulin, R. Rood, E. Prince","doi":"10.1109/RFIC.2010.5477364","DOIUrl":null,"url":null,"abstract":"SiGe 4G PA development is a key element in enabling integrated 4G front end SiGe ICs. In this paper, we report on a wideband SiGe 4G PA IC which meets WIMAX (802.16e) and LTE specifications. For 802.16e, the SiGe PA produces 25 dBm linear power at Vcc=3.3V for 2.3–2.7 GHz operation with ≪4% EVM and 18% efficiency while meeting spectral mask and exhibiting −43 dBm/MHz second harmonic levels. For TD-LTE, Band 40 (2.3–2.4 GHz) and FDD-LTE, Band 7 (2.500–2.570 GHz), this SiGe PA produces 28.5 dBm linear power while meeting 3GPP spectral mask and EVM specification for QAM 16.","PeriodicalId":269027,"journal":{"name":"2010 IEEE Radio Frequency Integrated Circuits Symposium","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2010.5477364","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14
Abstract
SiGe 4G PA development is a key element in enabling integrated 4G front end SiGe ICs. In this paper, we report on a wideband SiGe 4G PA IC which meets WIMAX (802.16e) and LTE specifications. For 802.16e, the SiGe PA produces 25 dBm linear power at Vcc=3.3V for 2.3–2.7 GHz operation with ≪4% EVM and 18% efficiency while meeting spectral mask and exhibiting −43 dBm/MHz second harmonic levels. For TD-LTE, Band 40 (2.3–2.4 GHz) and FDD-LTE, Band 7 (2.500–2.570 GHz), this SiGe PA produces 28.5 dBm linear power while meeting 3GPP spectral mask and EVM specification for QAM 16.