一种宽带高效CMOS缺相放大器的分析与设计

2010 IEEE Radio Frequency Integrated Circuits Symposium Pub Date : 2010-05-23 DOI:10.1109/RFIC.2010.5477315

M. V. van Schie, M. van der Heijden, M. Acar, A. de Graauw, L. D. de Vreede

{"title":"一种宽带高效CMOS缺相放大器的分析与设计","authors":"M. V. van Schie, M. van der Heijden, M. Acar, A. de Graauw, L. D. de Vreede","doi":"10.1109/RFIC.2010.5477315","DOIUrl":null,"url":null,"abstract":"This work presents the analysis and design of a novel transformer-based power combining network for an efficient outphasing power amplifier (PA). The proposed power combining network was implemented on PCB together with two 65nm CMOS class-E PA's. Measurements show a peak output power of more than 30dBm over a 29% bandwidth around 700MHz. The peak output power at 700MHz equals 33.9dBm. The 10dB back-off efficiency is larger than 27.3% over the same 29% bandwidth. The 6dB back-off efficiency is larger than 46.4% over this bandwidth. The drain efficiency at 650MHz is larger than 50% over a 10dB power back-off range, which is, to our best knowledge, the highest back-off efficiency reported in a CMOS outphasing PA to date.","PeriodicalId":269027,"journal":{"name":"2010 IEEE Radio Frequency Integrated Circuits Symposium","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"22","resultStr":"{\"title\":\"Analysis and design of a wideband high efficiency CMOS outphasing amplifier\",\"authors\":\"M. V. van Schie, M. van der Heijden, M. Acar, A. de Graauw, L. D. de Vreede\",\"doi\":\"10.1109/RFIC.2010.5477315\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work presents the analysis and design of a novel transformer-based power combining network for an efficient outphasing power amplifier (PA). The proposed power combining network was implemented on PCB together with two 65nm CMOS class-E PA's. Measurements show a peak output power of more than 30dBm over a 29% bandwidth around 700MHz. The peak output power at 700MHz equals 33.9dBm. The 10dB back-off efficiency is larger than 27.3% over the same 29% bandwidth. The 6dB back-off efficiency is larger than 46.4% over this bandwidth. The drain efficiency at 650MHz is larger than 50% over a 10dB power back-off range, which is, to our best knowledge, the highest back-off efficiency reported in a CMOS outphasing PA to date.\",\"PeriodicalId\":269027,\"journal\":{\"name\":\"2010 IEEE Radio Frequency Integrated Circuits Symposium\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"22\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE Radio Frequency Integrated Circuits Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2010.5477315\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2010.5477315","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 22

摘要

本文分析和设计了一种新型的基于变压器的功率组合网络，用于高效的失相功率放大器(PA)。所提出的功率组合网络与两个65nm CMOS e类PA一起在PCB上实现。测量表明，在700MHz左右的29%带宽上，峰值输出功率超过30dBm。700MHz时的峰值输出功率为33.9dBm。在相同的29%带宽下，10dB的回退效率大于27.3%。在此带宽上，6dB的回退效率大于46.4%。在10dB功率退退范围内，650MHz的漏极效率大于50%，据我们所知，这是迄今为止CMOS淘汰PA中报道的最高退退效率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Analysis and design of a wideband high efficiency CMOS outphasing amplifier

This work presents the analysis and design of a novel transformer-based power combining network for an efficient outphasing power amplifier (PA). The proposed power combining network was implemented on PCB together with two 65nm CMOS class-E PA's. Measurements show a peak output power of more than 30dBm over a 29% bandwidth around 700MHz. The peak output power at 700MHz equals 33.9dBm. The 10dB back-off efficiency is larger than 27.3% over the same 29% bandwidth. The 6dB back-off efficiency is larger than 46.4% over this bandwidth. The drain efficiency at 650MHz is larger than 50% over a 10dB power back-off range, which is, to our best knowledge, the highest back-off efficiency reported in a CMOS outphasing PA to date.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2010 IEEE Radio Frequency Integrated Circuits Symposium

自引率

0.00%

发文量