V. Krishnamurthy, K. Hershberger, B. Eplett, J. Dekosky, H. Zhao, D. Poulin, R. Rood, E. Prince
{"title":"用于4G (WIMAX和LTE)移动和游牧应用的SiGe功率放大器ic","authors":"V. Krishnamurthy, K. Hershberger, B. Eplett, J. Dekosky, H. Zhao, D. Poulin, R. Rood, E. Prince","doi":"10.1109/RFIC.2010.5477364","DOIUrl":null,"url":null,"abstract":"SiGe 4G PA development is a key element in enabling integrated 4G front end SiGe ICs. In this paper, we report on a wideband SiGe 4G PA IC which meets WIMAX (802.16e) and LTE specifications. For 802.16e, the SiGe PA produces 25 dBm linear power at Vcc=3.3V for 2.3–2.7 GHz operation with ≪4% EVM and 18% efficiency while meeting spectral mask and exhibiting −43 dBm/MHz second harmonic levels. For TD-LTE, Band 40 (2.3–2.4 GHz) and FDD-LTE, Band 7 (2.500–2.570 GHz), this SiGe PA produces 28.5 dBm linear power while meeting 3GPP spectral mask and EVM specification for QAM 16.","PeriodicalId":269027,"journal":{"name":"2010 IEEE Radio Frequency Integrated Circuits Symposium","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"SiGe power amplifier ICs for 4G (WIMAX and LTE) mobile and nomadic applications\",\"authors\":\"V. Krishnamurthy, K. Hershberger, B. Eplett, J. Dekosky, H. Zhao, D. Poulin, R. Rood, E. Prince\",\"doi\":\"10.1109/RFIC.2010.5477364\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"SiGe 4G PA development is a key element in enabling integrated 4G front end SiGe ICs. In this paper, we report on a wideband SiGe 4G PA IC which meets WIMAX (802.16e) and LTE specifications. For 802.16e, the SiGe PA produces 25 dBm linear power at Vcc=3.3V for 2.3–2.7 GHz operation with ≪4% EVM and 18% efficiency while meeting spectral mask and exhibiting −43 dBm/MHz second harmonic levels. For TD-LTE, Band 40 (2.3–2.4 GHz) and FDD-LTE, Band 7 (2.500–2.570 GHz), this SiGe PA produces 28.5 dBm linear power while meeting 3GPP spectral mask and EVM specification for QAM 16.\",\"PeriodicalId\":269027,\"journal\":{\"name\":\"2010 IEEE Radio Frequency Integrated Circuits Symposium\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-05-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE Radio Frequency Integrated Circuits Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2010.5477364\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2010.5477364","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14
摘要
SiGe 4G PA的开发是实现集成4G前端SiGe ic的关键因素。在本文中，我们报告了一种满足WIMAX (802.16e)和LTE规范的宽带SiGe 4G PA IC。对于802.16e, SiGe PA在2.3-2.7 GHz工作时，在Vcc=3.3V下产生25 dBm线性功率，≪4% EVM和18%效率，同时满足频谱掩模，并显示- 43 dBm/MHz次谐波电平。对于TD-LTE, Band 40 (2.3-2.4 GHz)和FDD-LTE, Band 7 (2500 - 2.570 GHz)，该SiGe PA产生28.5 dBm线性功率，同时满足3GPP频谱掩模和QAM 16的EVM规范。
SiGe power amplifier ICs for 4G (WIMAX and LTE) mobile and nomadic applications
SiGe 4G PA development is a key element in enabling integrated 4G front end SiGe ICs. In this paper, we report on a wideband SiGe 4G PA IC which meets WIMAX (802.16e) and LTE specifications. For 802.16e, the SiGe PA produces 25 dBm linear power at Vcc=3.3V for 2.3–2.7 GHz operation with ≪4% EVM and 18% efficiency while meeting spectral mask and exhibiting −43 dBm/MHz second harmonic levels. For TD-LTE, Band 40 (2.3–2.4 GHz) and FDD-LTE, Band 7 (2.500–2.570 GHz), this SiGe PA produces 28.5 dBm linear power while meeting 3GPP spectral mask and EVM specification for QAM 16.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
