An electronically temperature-compensated 427MHz low phase-noise AlN-on-Si micromechanical reference oscillator

H. M. Lavasani, W. Pan, F. Ayazi
{"title":"An electronically temperature-compensated 427MHz low phase-noise AlN-on-Si micromechanical reference oscillator","authors":"H. M. Lavasani, W. Pan, F. Ayazi","doi":"10.1109/RFIC.2010.5477392","DOIUrl":null,"url":null,"abstract":"This paper reports on the first demonstration of series tuning for lateral micromechanical oscillators and its application in a temperature-compensated 427MHz AlN-on-Si reference oscillator. The sustaining amplifier is a 13mW tunable TIA implemented in 0.18µm CMOS that uses shunt-parasitic cancellation to increase the tuning by 12× to 810ppm. The tunable oscillator along with a 2mW on-chip temperature compensation circuit has reduced the overall frequency drift to 70ppm in −10°C to 70°C. The phase-noise of the oscillator reaches −82dBc/Hz at 1kHz offset with floor below −147dBc/Hz.","PeriodicalId":269027,"journal":{"name":"2010 IEEE Radio Frequency Integrated Circuits Symposium","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2010.5477392","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8

Abstract

This paper reports on the first demonstration of series tuning for lateral micromechanical oscillators and its application in a temperature-compensated 427MHz AlN-on-Si reference oscillator. The sustaining amplifier is a 13mW tunable TIA implemented in 0.18µm CMOS that uses shunt-parasitic cancellation to increase the tuning by 12× to 810ppm. The tunable oscillator along with a 2mW on-chip temperature compensation circuit has reduced the overall frequency drift to 70ppm in −10°C to 70°C. The phase-noise of the oscillator reaches −82dBc/Hz at 1kHz offset with floor below −147dBc/Hz.
一种电子温度补偿427MHz低相位噪声的硅上铝微机械参考振荡器
本文报道了横向微机械振荡器串联调谐的首次演示及其在温度补偿427MHz硅铝参考振荡器中的应用。维持放大器是一个13mW可调谐TIA,实现在0.18µm CMOS中,使用分流寄生抵消将调谐提高12倍至810ppm。可调谐振荡器以及2mW片上温度补偿电路在- 10°C至70°C时将总频率漂移降低至70ppm。振荡器的相位噪声在1kHz偏置时达到−82dBc/Hz,下限低于−147dBc/Hz。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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