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IEEE MTT-S International Microwave Symposium Digest, 2003最新文献

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An elliptic low-pass filter with shorted cross-over and broadside-coupled microstrip lines 具有短交叉和宽耦合微带线的椭圆低通滤波器
IEEE MTT-S International Microwave Symposium Digest, 2003 Pub Date : 2003-06-08 DOI: 10.1109/MWSYM.2003.1210994
N. Yang, Zhi Ning Chen, Yun Yi Wang, M. Chia
{"title":"An elliptic low-pass filter with shorted cross-over and broadside-coupled microstrip lines","authors":"N. Yang, Zhi Ning Chen, Yun Yi Wang, M. Chia","doi":"10.1109/MWSYM.2003.1210994","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210994","url":null,"abstract":"An S-band two-layer elliptic type microstrip lowpass filter (LPF) is presented. This filter employs an open-ended cross-over and broadside-coupled microstrip lines with shorting vias to obtain the transmission zeros near the passband. An LPF has been fabricated and measured; simulation and measurement results prove validity of the proposed structure.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"147 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127562306","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Microwave coplanar filters on Si substrates 硅基微波共面滤波器
IEEE MTT-S International Microwave Symposium Digest, 2003 Pub Date : 2003-06-08 DOI: 10.1109/MWSYM.2003.1210531
K.T. Chan, A. Chin, J. Kuo, C. Chang, D. S. Duh, W. Lin, Chunxiang Zhu, M. Li, D. Kwong
{"title":"Microwave coplanar filters on Si substrates","authors":"K.T. Chan, A. Chin, J. Kuo, C. Chang, D. S. Duh, W. Lin, Chunxiang Zhu, M. Li, D. Kwong","doi":"10.1109/MWSYM.2003.1210531","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210531","url":null,"abstract":"High performance band-pass and band-stop microwave coplanar filters operating from 22 to 94 GHz have been realized on Si substrates using a proton implantation process. Very good insertion loss and filter characteristics close to ideal EM simulation are measured that demonstrate excellent filter performance to 91 GHz.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131120219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Micro-bias-tees using micromachined flip-chip inductors 使用微机械倒装电感器的微偏置三通
IEEE MTT-S International Microwave Symposium Digest, 2003 Pub Date : 2003-06-08 DOI: 10.1109/MWSYM.2003.1210983
P. Bell, V. Bright, Z. Popovic
{"title":"Micro-bias-tees using micromachined flip-chip inductors","authors":"P. Bell, V. Bright, Z. Popovic","doi":"10.1109/MWSYM.2003.1210983","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210983","url":null,"abstract":"In order to reduce the circuit area required by bias-tees in active circuits, an approach using a micromachined suspended inductor is presented in this paper. The inductor is fabricated using a commercial silicon micromachining process and then integrated with a microwave circuit using flip-chip assembly. Suspending the inductor above the substrate greatly reduces the parasitic capacitances associated with the substrate. The inductor has a measured self-resonant frequency of 18 GHz. A tethered approach allows \"pre-releasing\" of the structure, which makes integration possible on any substrate. 4-mm/sup 2/ bias-tees on both alumina and TMM6 substrates are presented in this work with comparable performance to commercially available bias-tees, but with a significant reduction in circuit area.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"19 12","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132154142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
A millimeter-wave harmonic optoelectronic mixer based on InAlAs/InGaAs metamorphic HEMT 基于InAlAs/InGaAs变质HEMT的毫米波谐波光电混频器
IEEE MTT-S International Microwave Symposium Digest, 2003 Pub Date : 2003-06-08 DOI: 10.1109/MWSYM.2003.1212629
Chang-Soon Choi, W. Choi, Daehyun Kim, K. Seo
{"title":"A millimeter-wave harmonic optoelectronic mixer based on InAlAs/InGaAs metamorphic HEMT","authors":"Chang-Soon Choi, W. Choi, Daehyun Kim, K. Seo","doi":"10.1109/MWSYM.2003.1212629","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1212629","url":null,"abstract":"We investigate the InAlAs/InGaAs metamorphic HEMT on GaAs substrate as a harmonic optoelectronic mixer. The fabricated metamorphic HEMT simultaneously performs photodetection of 1.55 /spl mu/m lightwaves and harmonic optoelectronic up-conversion into the millimeter-wave band. By changing the bias conditions of the HEMT, the harmonic optoelectronic mixing efficiency can be selectively enhanced while suppressing undesired mixing components. The metamorphic HEMT as a harmonic optoelectronic mixer is a promising candidate that can simplify the base station architecture in fiber-optic millimeter-wave transmission systems.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132270264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A new simple microstrip open-loop resonators filter for high selectivity applications 一种用于高选择性应用的新型简单微带开环谐振器滤波器
IEEE MTT-S International Microwave Symposium Digest, 2003 Pub Date : 2003-06-08 DOI: 10.1109/MWSYM.2003.1210444
D. C. Rebenaque, Alejandro Álvarez Melcón, M. Guglielmi
{"title":"A new simple microstrip open-loop resonators filter for high selectivity applications","authors":"D. C. Rebenaque, Alejandro Álvarez Melcón, M. Guglielmi","doi":"10.1109/MWSYM.2003.1210444","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210444","url":null,"abstract":"In this paper the design of a novel planar microwave filter is presented. The structure is designed in microstrip technology, and it is formed by two loop resonators of different lengths. The length of the first resonator is adjusted so that a suitable odd resonance is tuned to the center frequency of the filter. The length of the second resonator is adjusted so that the next even resonance is tuned again to the center frequency of the filter. The change in phase introduced by the resonances of the loops produces a cancellation of energy at a given frequency, therefore implementing a transmission zero for high selectivity. In this paper a design example is provided, and results of a manufactured prototype are discussed. Measured results confirm the theoretical predictions, and validate the new structure for high selectivity applications.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127808388","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
A 2GHz voltage tunable FBAR oscillator 一个2GHz电压可调FBAR振荡器
IEEE MTT-S International Microwave Symposium Digest, 2003 Pub Date : 2003-06-08 DOI: 10.1109/MWSYM.2003.1212472
A. Khanna, E. Gane, T. Chong
{"title":"A 2GHz voltage tunable FBAR oscillator","authors":"A. Khanna, E. Gane, T. Chong","doi":"10.1109/MWSYM.2003.1212472","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1212472","url":null,"abstract":"This paper describes the design and measured performance of a low-noise varactor tuned oscillator based on a film bulk acoustic resonator (FBAR) at 2 GHz. Using varactor tuning, this oscillator demonstrated a 2.5 MHz frequency tuning range at 1985 MHz with a phase noise of -112 dBc/Hz at 10 kHz from the carrier. This represents the first example of a low noise Si-bipolar FBAR tunable oscillator.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115625303","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 36
A broadside-edge-coupled vialess balun 一种宽边耦合的无管平衡器
IEEE MTT-S International Microwave Symposium Digest, 2003 Pub Date : 2003-06-08 DOI: 10.1109/MWSYM.2003.1212596
R. K. Settaluri, A. Weisshaar
{"title":"A broadside-edge-coupled vialess balun","authors":"R. K. Settaluri, A. Weisshaar","doi":"10.1109/MWSYM.2003.1212596","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1212596","url":null,"abstract":"This paper presents the design procedure for a new two-level vialess balun configuration. Simple design equations are reported for designing the impedance transforming balun in broadside-edge-coupled configuration. The balun is realized in a six-coupled line two-layer topology with no ground connections and interconnecting vias. The simulated results are validated by full-wave electromagnetic simulation and found to be in good agreement.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124184342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Coherent addition of intermodulation distortion in spectrum analyzers 频谱分析仪中互调失真的相干添加
IEEE MTT-S International Microwave Symposium Digest, 2003 Pub Date : 2003-06-08 DOI: 10.1109/MWSYM.2003.1212637
P. Stepanek, D. Kurtz, J. Gorin
{"title":"Coherent addition of intermodulation distortion in spectrum analyzers","authors":"P. Stepanek, D. Kurtz, J. Gorin","doi":"10.1109/MWSYM.2003.1212637","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1212637","url":null,"abstract":"Third-order intermodulation distortion testing using CW signals has long been known to be subject to errors due to the coherence of the spectral components generated in the device under test and the analysis device. The same effect occurs when the test signal is noise-like, such as a W-CDMA signal, even though such a signal appears to be noncoherent. This paper demonstrates the effect, so that the reader can be better prepared to optimize the accuracy of measurements of adjacent channel leakage in W-CDMA components.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"285 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124544114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A powerful tool for the synthesis of prototype filters with arbitrary topology 一个强大的工具，用于合成原型滤波器与任意拓扑
IEEE MTT-S International Microwave Symposium Digest, 2003 Pub Date : 2003-06-08 DOI: 10.1109/MWSYM.2003.1210382
G. Macchiarella
{"title":"A powerful tool for the synthesis of prototype filters with arbitrary topology","authors":"G. Macchiarella","doi":"10.1109/MWSYM.2003.1210382","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210382","url":null,"abstract":"This paper describes a CAD tool for synthesizing prototype filters with arbitrary topology, with cross-couplings starting also from source and (or) from load; the generalized Chebycheff characteristic is assumed, with asymmetric transmission zeros, both pure imaginary or complex. The proposed method employs the coupling matrix of a generic prototype, obtained through well-established procedures; then the coupling matrix of the desired topology is determined with a procedure based on multiple matrix rotations (similarity transforms) and numerical optimization (the sequence and angles of the rotations are automatically evaluated in the procedure and their knowledge is not a priori required). The novel CAD tool has been tested with some coupling schemes recently proposed, which don't require diagonal couplings for realizing asymmetric transmission zeros.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114493033","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
An optically controlled isolator using ferrite edge mode 采用铁氧体边缘模式的光控隔离器
IEEE MTT-S International Microwave Symposium Digest, 2003 Pub Date : 2003-06-08 DOI: 10.1109/MWSYM.2003.1210964
T. Kodera
{"title":"An optically controlled isolator using ferrite edge mode","authors":"T. Kodera","doi":"10.1109/MWSYM.2003.1210964","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210964","url":null,"abstract":"This paper introduces a new type of microwave isolator. The nonreciprocity of the isolator can be optically controlled. The operation is based on the two phenomena: the ferrite edge-mode and the photo-generated plasma on silicon substrate. Conventional ferrite edge-mode isolator has been made of the ferrite and the resistive material. The later is used to absorb the reverse-propagating wave of the isolator. An inadequate choice of the resistive body leads to the imperfect absorption; the isolation ratio decreases. In this paper, a novel isolator is introduced by using this change of isolation. The optical control is realized by changing the intensity of illumination to produce the variation of the plasma density on the silicon substrate. On the isolator, the frequency response is investigated both experimentally and numerically. The numerical analysis is performed by the FDTD method. Both numerical and experimental results have shown that the isolation ratio can be controlled for 39 dB at 11GHz by the laser-illumination on the silicon substrate.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115047806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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