A 2GHz voltage tunable FBAR oscillator

A. Khanna, E. Gane, T. Chong
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引用次数: 36

Abstract

This paper describes the design and measured performance of a low-noise varactor tuned oscillator based on a film bulk acoustic resonator (FBAR) at 2 GHz. Using varactor tuning, this oscillator demonstrated a 2.5 MHz frequency tuning range at 1985 MHz with a phase noise of -112 dBc/Hz at 10 kHz from the carrier. This represents the first example of a low noise Si-bipolar FBAR tunable oscillator.
一个2GHz电压可调FBAR振荡器
本文介绍了一种基于薄膜体声谐振器(FBAR)的2 GHz低噪声变容调谐振荡器的设计和性能测试。利用变容管调谐,该振荡器在1985 MHz处的频率调谐范围为2.5 MHz,在载波10 kHz处的相位噪声为-112 dBc/Hz。这是低噪声硅双极FBAR可调谐振荡器的第一个例子。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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