发布求助
文献互助 智能选刊 最新文献

IEEE MTT-S International Microwave Symposium Digest, 2003最新文献

筛选
英文 中文
V-band transmission and reflection grid amplifier packaged in waveguide 波导封装的v波段传输和反射网格放大器
IEEE MTT-S International Microwave Symposium Digest, 2003 Pub Date : 2003-07-15 DOI: 10.1109/MWSYM.2003.1210519
Chun-Tung Cheung, R. Tsai, R. Kagiwada, D. Rutledge
{"title":"V-band transmission and reflection grid amplifier packaged in waveguide","authors":"Chun-Tung Cheung, R. Tsai, R. Kagiwada, D. Rutledge","doi":"10.1109/MWSYM.2003.1210519","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210519","url":null,"abstract":"We designed and demonstrated two monolithic V-band grid amplifiers packaged in waveguides. We measured a 2 dB small-signal system gain for both transmission and reflection amplifiers. This is the first monolithic grid amplifier packaged and measured in a waveguide in the V-band.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"74 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-07-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117305068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Numerical and experimental investigation of losses in a tray based spatial power amplifier 基于托盘的空间功率放大器损耗的数值与实验研究
IEEE MTT-S International Microwave Symposium Digest, 2003 Pub Date : 2003-06-08 DOI: 10.1109/MWSYM.2003.1210520
A. Al-Zayed, S. Ortiz, M. Ozkar, A. Mortazawi
{"title":"Numerical and experimental investigation of losses in a tray based spatial power amplifier","authors":"A. Al-Zayed, S. Ortiz, M. Ozkar, A. Mortazawi","doi":"10.1109/MWSYM.2003.1210520","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210520","url":null,"abstract":"This paper presents experimental and numerical investigations on a 49-element Ka-band amplifier array. This study is aimed at determining the origin of various losses in the amplifier array. Passive simulation data confirms that the load seen by the active devices is well matched and that most of the power is coupled to the LSE/sub 10/ mode. This means that coherent power combining should take place if there is no phase and amplitude variation due to the active devices and phase correcting dielectric lenses.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124432464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Implication of baseband impedance and bias for FET amplifier linearization 基带阻抗和偏置对FET放大器线性化的影响
IEEE MTT-S International Microwave Symposium Digest, 2003 Pub Date : 2003-06-08 DOI: 10.1109/MWSYM.2003.1212487
J. Brinkhoff, A. Parker
{"title":"Implication of baseband impedance and bias for FET amplifier linearization","authors":"J. Brinkhoff, A. Parker","doi":"10.1109/MWSYM.2003.1212487","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1212487","url":null,"abstract":"Baseband impedance can have a positive or negative effect on the intermodulation of microwave circuits. Concise formulae are shown to be useful to a designer to select intelligently a FET and its bias on the basis of the impact of baseband impedance on intermodulation. Memoryless predistortion techniques are shown to be effective over wide bandwidths at a suitable bias.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123179066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Large signal pulsed RF and DC load pull characterization of high voltage 10W GaAs-GaInP HBTs 高电压10W GaAs-GaInP HBTs的大信号脉冲射频和直流负载拉特性
IEEE MTT-S International Microwave Symposium Digest, 2003 Pub Date : 2003-06-08 DOI: 10.1109/MWSYM.2003.1210455
T. Gasseling, S. Heckmann, D. Barataud, J. Nebus, J. Villotte, R. Quéré, D. Floriot, P. Auxemery
{"title":"Large signal pulsed RF and DC load pull characterization of high voltage 10W GaAs-GaInP HBTs","authors":"T. Gasseling, S. Heckmann, D. Barataud, J. Nebus, J. Villotte, R. Quéré, D. Floriot, P. Auxemery","doi":"10.1109/MWSYM.2003.1210455","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210455","url":null,"abstract":"This paper presents an on-wafer set up for the characterization of high voltage (26V) power HBTs under simultaneous large pulsed RF signal and pulsed DC test conditions. Both RF power profiles and DC current/voltage profiles are measured thanks to the use of a pulsed VNA (for RF) and a sampling scope (for DC). Typically the pulse width range is (300 ns - 300 ms) and a 10% duty cycle is applied. RF power performances and DC consumption of the transistors under test are recorded at different time positions within the pulse width This enables to investigate the effects of transient thermal aspects on RF power characteristics. S Band Measurements of 10 Watt (20 finger 2*70mm/sup 2/ GaAs-GaInP HBTs from Thales; TRT and UMS foundry) with specific gold radiator are reported in this paper.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127267147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Electrostatically-tunable analog RF MEMS varactors with measured capacitance range of 300% 静电可调谐模拟RF MEMS变容管，测量电容范围为300%
IEEE MTT-S International Microwave Symposium Digest, 2003 Pub Date : 2003-06-08 DOI: 10.1109/MWSYM.2003.1210488
D. Peroulis, L. Katehi
{"title":"Electrostatically-tunable analog RF MEMS varactors with measured capacitance range of 300%","authors":"D. Peroulis, L. Katehi","doi":"10.1109/MWSYM.2003.1210488","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210488","url":null,"abstract":"This paper reports on the design, fabrication, and testing of a novel analog MEMS varactor with measured tuning range of 300%. The proposed electrostatically actuated varactor is based on a parallel-plate approach and is best suited for microwave/millimeter-wave applications. The measured capacitance values are in the range of 40-160 fF and are achieved with DC voltages of 20-34 V. The proposed varactor has the additional advantages of very high resonant frequency (its series measured parasitic inductance is 9 pH) and high quality factor (higher than 80 at 40 GHz).","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127378122","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 70
Using amplifiers with poor linearity to linearize amplifiers with good linearity 利用线性度差的放大器对线性度好的放大器进行线性化
IEEE MTT-S International Microwave Symposium Digest, 2003 Pub Date : 2003-06-08 DOI: 10.1109/MWSYM.2003.1210476
T. Weldon, K. Miehle
{"title":"Using amplifiers with poor linearity to linearize amplifiers with good linearity","authors":"T. Weldon, K. Miehle","doi":"10.1109/MWSYM.2003.1210476","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210476","url":null,"abstract":"A new linearization method is presented where a device with poor linearity is combined with a second device having good linearity. The resulting composite device has much better linearity than the two original devices. The new method is applicable to both receivers and transmitters, and is implemented as an integrated circuit without external components. Third order intermodulation distortion is canceled by appropriate design of the gains and intercept points of two amplifiers. Finally, hardware test data is presented both for an integrated circuit prototype and for a prototype using off-the-shelf amplifiers.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127459571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Analysis of stripline T-junction with rectangular cut based on eigenmode expansion method and Foster-type equivalent network 基于特征模态展开法和福斯特等效网络的矩形切割带状线t型结分析
IEEE MTT-S International Microwave Symposium Digest, 2003 Pub Date : 2003-06-08 DOI: 10.1109/MWSYM.2003.1212563
T. Takenaka, T. Hiraoka, H. Jui-Pang
{"title":"Analysis of stripline T-junction with rectangular cut based on eigenmode expansion method and Foster-type equivalent network","authors":"T. Takenaka, T. Hiraoka, H. Jui-Pang","doi":"10.1109/MWSYM.2003.1212563","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1212563","url":null,"abstract":"A stripline T-junction with a rectangular cut at the symmetric center is analyzed based on a two dimensional (2-D) planar circuit model, mode theory and the derived Foster-type equivalent network. Wide-band frequency characteristics are calculated with cut-size as a parameter, which leads to a discussion about transmission vs bandwidth characteristics, the realized limit of characteristics and determination of the optimum cut.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127465416","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A high power density, 6W MMIC for Ku/K-Band applications 高功率密度，6W MMIC用于Ku/ k波段应用
IEEE MTT-S International Microwave Symposium Digest, 2003 Pub Date : 2003-06-08 DOI: 10.1109/MWSYM.2003.1212503
T. Shimura, T. Satoh, Y. Hasegawa, J. Fukaya
{"title":"A high power density, 6W MMIC for Ku/K-Band applications","authors":"T. Shimura, T. Satoh, Y. Hasegawa, J. Fukaya","doi":"10.1109/MWSYM.2003.1212503","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1212503","url":null,"abstract":"A Ku/K-Band very small size MMIC high power amplifier (HPA) providing 6W of CW output power, 23dB of gain and 30% power added efficiency for application in the Ku/K-Band is presented. It is produced on a low cost, commercially available 0.25um pHEMT process. This MMIC is composed of three stage pHEMT and chip size is 3.5 /spl times/ 3.0 mm/sup 2/. The HPA achieved 570 mW output power per 1 mm/sup 2/ die area. This value is the highest power density at Ku/K/Ka-Band reported to date.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125142376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
A dual-band 3-dB three-port power divider based on a two-section transmission line transformer 一种基于两段传输线变压器的双频3db三端口功率分配器
IEEE MTT-S International Microwave Symposium Digest, 2003 Pub Date : 2003-06-08 DOI: 10.1109/MWSYM.2003.1210877
S. Srisathit, S. Virunphun, K. Bandudej, M. Chongcheawchamnan, A. Worapishet
{"title":"A dual-band 3-dB three-port power divider based on a two-section transmission line transformer","authors":"S. Srisathit, S. Virunphun, K. Bandudej, M. Chongcheawchamnan, A. Worapishet","doi":"10.1109/MWSYM.2003.1210877","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210877","url":null,"abstract":"A new dual-band 3-dB three-port power divider with arbitrary impedance terminations is presented in this paper. The structure is composed of a two-section transmission line transformer and an isolation resistor. The transmission line's electrical length is /spl pi//3 each at fundamental frequency, resulting in a 2/spl pi//3 total length. The proposed circuit's design equations and graph obtained from analytical results are also given. The technique is validated by the experimental results on 3-dB 900/1800 MHz power divider with Z/sub s/=100 /spl Omega/ and Z/sub L/=50 /spl Omega/. Good performances of the proposed power combiner/divider at both frequencies are obtained.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125849473","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 27
Microwave permeability measurement of unsaturated hexaferrites of Y-type y型不饱和六铁氧体的微波磁导率测定
IEEE MTT-S International Microwave Symposium Digest, 2003 Pub Date : 2003-06-08 DOI: 10.1109/MWSYM.2003.1210968
M. Obol, C. Vittoria
{"title":"Microwave permeability measurement of unsaturated hexaferrites of Y-type","authors":"M. Obol, C. Vittoria","doi":"10.1109/MWSYM.2003.1210968","DOIUrl":"https://doi.org/10.1109/MWSYM.2003.1210968","url":null,"abstract":"We have investigated the zero field permeability behavior of Y-type hexaferrites. The measured permeability from 0.045 to 10 GHz was theoretically explained in term of zero magnetic field multi-domain and domain wall resonance. The basal plane anisotropy field, H/sub /spl phi///sup A/, domain wall thickness /spl delta/ and length L of the domain wall were estimated from resonance and permeability data.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125917480","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信