基带阻抗和偏置对FET放大器线性化的影响

IEEE MTT-S International Microwave Symposium Digest, 2003 Pub Date : 2003-06-08 DOI:10.1109/MWSYM.2003.1212487

J. Brinkhoff, A. Parker

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引用次数: 5

摘要

基带阻抗对微波电路的互调有积极或消极的影响。本文给出了简洁的公式，可以帮助设计者根据基带阻抗对互调的影响来智能地选择场效应管及其偏置。在适当的偏置下，无记忆预失真技术在宽频带上是有效的。

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Implication of baseband impedance and bias for FET amplifier linearization

Baseband impedance can have a positive or negative effect on the intermodulation of microwave circuits. Concise formulae are shown to be useful to a designer to select intelligently a FET and its bias on the basis of the impact of baseband impedance on intermodulation. Memoryless predistortion techniques are shown to be effective over wide bandwidths at a suitable bias.

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IEEE MTT-S International Microwave Symposium Digest, 2003

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