静电可调谐模拟RF MEMS变容管,测量电容范围为300%

D. Peroulis, L. Katehi
{"title":"静电可调谐模拟RF MEMS变容管,测量电容范围为300%","authors":"D. Peroulis, L. Katehi","doi":"10.1109/MWSYM.2003.1210488","DOIUrl":null,"url":null,"abstract":"This paper reports on the design, fabrication, and testing of a novel analog MEMS varactor with measured tuning range of 300%. The proposed electrostatically actuated varactor is based on a parallel-plate approach and is best suited for microwave/millimeter-wave applications. The measured capacitance values are in the range of 40-160 fF and are achieved with DC voltages of 20-34 V. The proposed varactor has the additional advantages of very high resonant frequency (its series measured parasitic inductance is 9 pH) and high quality factor (higher than 80 at 40 GHz).","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"70","resultStr":"{\"title\":\"Electrostatically-tunable analog RF MEMS varactors with measured capacitance range of 300%\",\"authors\":\"D. Peroulis, L. Katehi\",\"doi\":\"10.1109/MWSYM.2003.1210488\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reports on the design, fabrication, and testing of a novel analog MEMS varactor with measured tuning range of 300%. The proposed electrostatically actuated varactor is based on a parallel-plate approach and is best suited for microwave/millimeter-wave applications. The measured capacitance values are in the range of 40-160 fF and are achieved with DC voltages of 20-34 V. The proposed varactor has the additional advantages of very high resonant frequency (its series measured parasitic inductance is 9 pH) and high quality factor (higher than 80 at 40 GHz).\",\"PeriodicalId\":252251,\"journal\":{\"name\":\"IEEE MTT-S International Microwave Symposium Digest, 2003\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-06-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"70\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE MTT-S International Microwave Symposium Digest, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2003.1210488\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE MTT-S International Microwave Symposium Digest, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2003.1210488","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 70

摘要

本文报道了一种新型模拟MEMS变容管的设计、制造和测试,测量调谐范围为300%。所提出的静电致动变容器基于平行板方法,最适合微波/毫米波应用。测量的电容值在40- 160ff的范围内,并在20-34 V的直流电压下实现。该变容管还具有谐振频率高(系列测量寄生电感为9 pH)和质量因数高(40 GHz时高于80)的优点。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electrostatically-tunable analog RF MEMS varactors with measured capacitance range of 300%
This paper reports on the design, fabrication, and testing of a novel analog MEMS varactor with measured tuning range of 300%. The proposed electrostatically actuated varactor is based on a parallel-plate approach and is best suited for microwave/millimeter-wave applications. The measured capacitance values are in the range of 40-160 fF and are achieved with DC voltages of 20-34 V. The proposed varactor has the additional advantages of very high resonant frequency (its series measured parasitic inductance is 9 pH) and high quality factor (higher than 80 at 40 GHz).
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