Implication of baseband impedance and bias for FET amplifier linearization

Abstract

Baseband impedance can have a positive or negative effect on the intermodulation of microwave circuits. Concise formulae are shown to be useful to a designer to select intelligently a FET and its bias on the basis of the impact of baseband impedance on intermodulation. Memoryless predistortion techniques are shown to be effective over wide bandwidths at a suitable bias.