硅基微波共面滤波器

K.T. Chan, A. Chin, J. Kuo, C. Chang, D. S. Duh, W. Lin, Chunxiang Zhu, M. Li, D. Kwong
{"title":"硅基微波共面滤波器","authors":"K.T. Chan, A. Chin, J. Kuo, C. Chang, D. S. Duh, W. Lin, Chunxiang Zhu, M. Li, D. Kwong","doi":"10.1109/MWSYM.2003.1210531","DOIUrl":null,"url":null,"abstract":"High performance band-pass and band-stop microwave coplanar filters operating from 22 to 94 GHz have been realized on Si substrates using a proton implantation process. Very good insertion loss and filter characteristics close to ideal EM simulation are measured that demonstrate excellent filter performance to 91 GHz.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Microwave coplanar filters on Si substrates\",\"authors\":\"K.T. Chan, A. Chin, J. Kuo, C. Chang, D. S. Duh, W. Lin, Chunxiang Zhu, M. Li, D. Kwong\",\"doi\":\"10.1109/MWSYM.2003.1210531\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High performance band-pass and band-stop microwave coplanar filters operating from 22 to 94 GHz have been realized on Si substrates using a proton implantation process. Very good insertion loss and filter characteristics close to ideal EM simulation are measured that demonstrate excellent filter performance to 91 GHz.\",\"PeriodicalId\":252251,\"journal\":{\"name\":\"IEEE MTT-S International Microwave Symposium Digest, 2003\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-06-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE MTT-S International Microwave Symposium Digest, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2003.1210531\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE MTT-S International Microwave Symposium Digest, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2003.1210531","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

摘要

利用质子注入工艺在硅衬底上实现了工作频率为22 ~ 94 GHz的高性能带通和带阻微波共面滤波器。测量到的插入损耗和滤波器特性非常好,接近理想的电磁仿真,在91 GHz范围内表现出优异的滤波器性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Microwave coplanar filters on Si substrates
High performance band-pass and band-stop microwave coplanar filters operating from 22 to 94 GHz have been realized on Si substrates using a proton implantation process. Very good insertion loss and filter characteristics close to ideal EM simulation are measured that demonstrate excellent filter performance to 91 GHz.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信