K.T. Chan, A. Chin, J. Kuo, C. Chang, D. S. Duh, W. Lin, Chunxiang Zhu, M. Li, D. Kwong
{"title":"硅基微波共面滤波器","authors":"K.T. Chan, A. Chin, J. Kuo, C. Chang, D. S. Duh, W. Lin, Chunxiang Zhu, M. Li, D. Kwong","doi":"10.1109/MWSYM.2003.1210531","DOIUrl":null,"url":null,"abstract":"High performance band-pass and band-stop microwave coplanar filters operating from 22 to 94 GHz have been realized on Si substrates using a proton implantation process. Very good insertion loss and filter characteristics close to ideal EM simulation are measured that demonstrate excellent filter performance to 91 GHz.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Microwave coplanar filters on Si substrates\",\"authors\":\"K.T. Chan, A. Chin, J. Kuo, C. Chang, D. S. Duh, W. Lin, Chunxiang Zhu, M. Li, D. Kwong\",\"doi\":\"10.1109/MWSYM.2003.1210531\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High performance band-pass and band-stop microwave coplanar filters operating from 22 to 94 GHz have been realized on Si substrates using a proton implantation process. Very good insertion loss and filter characteristics close to ideal EM simulation are measured that demonstrate excellent filter performance to 91 GHz.\",\"PeriodicalId\":252251,\"journal\":{\"name\":\"IEEE MTT-S International Microwave Symposium Digest, 2003\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-06-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE MTT-S International Microwave Symposium Digest, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2003.1210531\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE MTT-S International Microwave Symposium Digest, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2003.1210531","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High performance band-pass and band-stop microwave coplanar filters operating from 22 to 94 GHz have been realized on Si substrates using a proton implantation process. Very good insertion loss and filter characteristics close to ideal EM simulation are measured that demonstrate excellent filter performance to 91 GHz.