基于InAlAs/InGaAs变质HEMT的毫米波谐波光电混频器

Chang-Soon Choi, W. Choi, Daehyun Kim, K. Seo
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引用次数: 7

摘要

我们研究了在GaAs衬底上的InAlAs/InGaAs变质HEMT作为谐波光电混频器。所制备的变质HEMT同时进行1.55 /spl μ m光波的光探测和谐波光电上转换到毫米波波段。通过改变HEMT的偏置条件,可以选择性地提高谐波光电混合效率,同时抑制不需要的混合成分。在光纤毫米波传输系统中,变质HEMT作为一种谐波光电混频器是一种很有前途的候选材料,可以简化基站结构。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A millimeter-wave harmonic optoelectronic mixer based on InAlAs/InGaAs metamorphic HEMT
We investigate the InAlAs/InGaAs metamorphic HEMT on GaAs substrate as a harmonic optoelectronic mixer. The fabricated metamorphic HEMT simultaneously performs photodetection of 1.55 /spl mu/m lightwaves and harmonic optoelectronic up-conversion into the millimeter-wave band. By changing the bias conditions of the HEMT, the harmonic optoelectronic mixing efficiency can be selectively enhanced while suppressing undesired mixing components. The metamorphic HEMT as a harmonic optoelectronic mixer is a promising candidate that can simplify the base station architecture in fiber-optic millimeter-wave transmission systems.
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