Microwave coplanar filters on Si substrates

IEEE MTT-S International Microwave Symposium Digest, 2003 Pub Date : 2003-06-08 DOI:10.1109/MWSYM.2003.1210531

K.T. Chan, A. Chin, J. Kuo, C. Chang, D. S. Duh, W. Lin, Chunxiang Zhu, M. Li, D. Kwong

引用次数: 6

Abstract

High performance band-pass and band-stop microwave coplanar filters operating from 22 to 94 GHz have been realized on Si substrates using a proton implantation process. Very good insertion loss and filter characteristics close to ideal EM simulation are measured that demonstrate excellent filter performance to 91 GHz.

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硅基微波共面滤波器

利用质子注入工艺在硅衬底上实现了工作频率为22 ~ 94 GHz的高性能带通和带阻微波共面滤波器。测量到的插入损耗和滤波器特性非常好，接近理想的电磁仿真，在91 GHz范围内表现出优异的滤波器性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE MTT-S International Microwave Symposium Digest, 2003

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