{"title":"一个2GHz电压可调FBAR振荡器","authors":"A. Khanna, E. Gane, T. Chong","doi":"10.1109/MWSYM.2003.1212472","DOIUrl":null,"url":null,"abstract":"This paper describes the design and measured performance of a low-noise varactor tuned oscillator based on a film bulk acoustic resonator (FBAR) at 2 GHz. Using varactor tuning, this oscillator demonstrated a 2.5 MHz frequency tuning range at 1985 MHz with a phase noise of -112 dBc/Hz at 10 kHz from the carrier. This represents the first example of a low noise Si-bipolar FBAR tunable oscillator.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"68 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"36","resultStr":"{\"title\":\"A 2GHz voltage tunable FBAR oscillator\",\"authors\":\"A. Khanna, E. Gane, T. Chong\",\"doi\":\"10.1109/MWSYM.2003.1212472\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the design and measured performance of a low-noise varactor tuned oscillator based on a film bulk acoustic resonator (FBAR) at 2 GHz. Using varactor tuning, this oscillator demonstrated a 2.5 MHz frequency tuning range at 1985 MHz with a phase noise of -112 dBc/Hz at 10 kHz from the carrier. This represents the first example of a low noise Si-bipolar FBAR tunable oscillator.\",\"PeriodicalId\":252251,\"journal\":{\"name\":\"IEEE MTT-S International Microwave Symposium Digest, 2003\",\"volume\":\"68 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-06-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"36\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE MTT-S International Microwave Symposium Digest, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2003.1212472\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE MTT-S International Microwave Symposium Digest, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2003.1212472","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper describes the design and measured performance of a low-noise varactor tuned oscillator based on a film bulk acoustic resonator (FBAR) at 2 GHz. Using varactor tuning, this oscillator demonstrated a 2.5 MHz frequency tuning range at 1985 MHz with a phase noise of -112 dBc/Hz at 10 kHz from the carrier. This represents the first example of a low noise Si-bipolar FBAR tunable oscillator.