{"title":"RF and microwave characteristics of a 20nm gate length InAlN/GaN-based HEMT having a high “Figure of Merit”","authors":"A. Bhattacharjee, T. Lenka","doi":"10.1109/ICDCSYST.2014.6926151","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2014.6926151","url":null,"abstract":"In this paper we propose a new structure of In<sub>x</sub>Al<sub>1</sub>_<sub>x</sub>N/GaN based HEMT with gate length of 20nm. The InAlN barrier layer is intentionally doped to boost the “Figure of Merit”. We obtained an I<sub>on</sub>/I<sub>off</sub> ratio of 10<sup>10.1</sup> and found that it is 10<sup>5</sup> times better than the undoped barrier conventional InAlN/AlN HEMT. This excellent “Figure of Merit” of the proposed HEMT leads to low gate leakage current and extremely low parasitic capacitances and conductance than the existing conventional InAlN/AlN HEMT. Further the RF and Microwave characteristics of this proposed HEMT is presented with the help of Stern stability factor, max transducer power gain and the RF parameters are presented by Smith chart and Polar plot.","PeriodicalId":252016,"journal":{"name":"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129472093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Improved fused floating point add-subtract and multiply-add unit for FFT implementation","authors":"P. Palsodkar, A. Gurjar","doi":"10.1109/ICDCSYST.2014.6926157","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2014.6926157","url":null,"abstract":"This paper describes the design and implementation of user defined fused floating-point arithmetic operations that can be used to implement Radix 2 Fast Fourier Transform (FFT) for complex numbers used in Digital Signal Processing (DSP-C) processors. The design is implemented and simulated by targeting Xilinx vertex 5 FPGA device. This paper describes the optimization of fused floating point modules in terms of area, delay, power and energy. Here we have achieved reduction in area (in terms of LUT required) by 27.09%, reduced delay by 7.10%, reduction in power consumption by 11 % and energy is reduced by 26.22% as compared to discrete implementation.","PeriodicalId":252016,"journal":{"name":"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125846804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"FPGA based realization of OFDM transceiver system for Software Defined Radio","authors":"Neenu Joseph, P. Kumar","doi":"10.1109/ICDCSYST.2014.6926167","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2014.6926167","url":null,"abstract":"This paper describes the design and implementation of OFDM transmitter and Receiver in Partial Reconfigurable (PA) FPGA for Software Defined Radio (SDR) system. PR blocks inside FPGA helps in reducing the complexity in SDR system design, overall power and area consumption. The OFDM transceiver is designed with scalable FFT/IFFT- and three types of modulations. An intelligent receiver design is being used, which identifies the type of modulation employed based on the features present in receiving signal and reprograms demodulation circuit at run time without changing much in other baseband processing modules. Further, A unique technique of Peak to Average Power Ratio (PAPR) reduction is being implemented.","PeriodicalId":252016,"journal":{"name":"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122265042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A clustering based hybrid routing protocol for enhancing network lifetime of Wireless Sensor Network","authors":"J. Gnanambigai, N. Rengarajan, N. Navaladi","doi":"10.1109/ICDCSYST.2014.6926119","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2014.6926119","url":null,"abstract":"The fastest growing technology that would dominate the future world of wireless communication is Wireless Sensor Networks (WSNs). The critical issue in WSNs is energy. In order to improve the lifetime of the network, energy should be used in an efficient manner. Many routing protocols has been developed to improve energy efficiency of wireless sensor networks. The routing protocol may be conventional type or hybrid type. The hybrid type integrates the advantages of two different protocols. In this paper, a new hybrid routing protocol called Quadrant Based Low Energy Adaptive clustering Hierarchy (QB-LEACH) is developed where lifetime improvement is vital. This protocol combines the Quadrant based Directional Routing(Q-DIR), an Ad-hoc routing algorithm and Low Energy Adaptive clustering Hierarchy (LEACH), a routing algorithm for WSNs. The performance nature of the protocol is evaluated and observed that this protocol vanquish the other in terms of energy conservation and network period.","PeriodicalId":252016,"journal":{"name":"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125825997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A review on feature extraction and denoising of ECG signal using wavelet transform","authors":"V. Seena, Jerrin Yomas","doi":"10.1109/ICDCSYST.2014.6926190","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2014.6926190","url":null,"abstract":"The electrocardiogram is a technique of recording bioelectric currents generated by the heart which is useful for diagnosing many cardiac diseases. The feature extraction and denoising of ECG are highly useful in cardiology. Wavelet based methods present best performance as irregularity measures and makes them suitable for ECG data analysis. This paper proposes comparison of different feature extraction and denoising techniques using wavelet transform. In an ECG with P-QRS-T wave, QRS complex has the most striking part for analysis. The first part of the paper deals with comparison of three different feature extraction techniques using wavelet transform. The second part deals with the denoising of ECG signal using three different wavelet transform. The most troublesome noise sources contain frequency components within ECG spectrum, i.e. electrical activity of the muscles and instability of electrode skin contact. Such noises are difficult to remove using typical filter procedure. In such cases signal noise reduction is only possible with wavelet denoising techniques. The comparison of different wavelet transform techniques for feature extraction and denoising of ECG signal is mentioned, which is suitable for the selection of most applicable techniques. Wavelet transform is a powerful tool for the analysis of ECG signal.","PeriodicalId":252016,"journal":{"name":"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128119166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Power, delay and noise margin comparison of binary and quaternary SRAM","authors":"D. Borkute, Pratibha Patel, P. Dakhole","doi":"10.1109/ICDCSYST.2014.6926172","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2014.6926172","url":null,"abstract":"The explosive growth of semiconductor industry over a decade have been driven by rapid scaling of complementary metal-oxide-semiconductor (CMOS) technology. Multiple-valued logic allows the reduction of the required number of signals in the circuit, so can be effectively used to reduce the impact of interconnections [12]. In addition to the reduction in interconnections, multiple-valued logic also offers a possibility of increasing the functional complexity, producing circuits that have performance comparable to the binary circuits. Memory application is an area where the multi-valued approach has been successfully used to design commercial integrated circuits. Memories are designed with objective to reduce area, while maintaining proper timing characteristics. This paper presents a comparative study of delay and power consumption of binary and quaternary circuit implementations of SRAM. Larger number of logic functions can be accommodate in quaternary circuits decreasing the number of data interconnect lines and processing components and logic circuits can represent numbers with fewer bits than binary. Static Noise Margin (SNM) is the most important parameter for memory design, affecting both read and write margin [8]. Both cell ratio and pull-up ratio are important parameters because these are the only parameters in the hand of the design engineer, static noise margin of the SRAM cell depends on the cell ratio (CR), supply voltage and also pull up ratio [8]. We have also found bit rate of both circuits for comparative study.","PeriodicalId":252016,"journal":{"name":"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128135986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Low power and high speed level shifters in 0.18um technology","authors":"O. Kumar, D. Moni, F. Princess","doi":"10.1109/ICDCSYST.2014.6926214","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2014.6926214","url":null,"abstract":"As the demand of handheld devices like personal computers, cell phones, multimedia devices etc., is growing, low power consumption has become major design issue for microelectronics circuits. In multi voltage systems, level shifters are significant circuit components and are used in between core circuit and I/O circuit. In this paper high level shifters for low power and high speed application have been presented. Level shifter II has power consumption of 180.75pw and delay of 435.66 us as compared to 231.56 pw and 49.57 ms of level shifter I. Level shifter IV has power consumption of 70.29 pw and delay of 282.87 ps as compared to 77.18 pw and 299.26 ps of level shifter III. All the circuits were simulated using Mentor Graphics Design Architect 0.18um Technology.","PeriodicalId":252016,"journal":{"name":"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132772986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A comprehensive analysis of SOI-TFET with novel AlxGa1−xAs channel material","authors":"S. Chander, S. Baishya","doi":"10.1109/ICDCSYST.2014.6926155","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2014.6926155","url":null,"abstract":"In this paper, first time we have analyzed Al<sub>x</sub>Ga<sub>1-x</sub>As as a novel channel material for SOI based Tunnel Field Effect Transistor (TFET) with V<sub>DD</sub> = 0.7. This direct bandgap channel material Al<sub>0.2</sub>Ga<sub>0.8</sub>As is compared with other channel materials that show the good device features. Using this material as channel we can see that the leakage current is very low as well as the Miller capacitance is also very small as compared to other channel materials. The only disadvantage of using Al<sub>x</sub>Ga<sub>1-x</sub>As as channel is the low ON current that can be improved by using Si<sub>1-x</sub>Ge<sub>x</sub> as source and drain. The main objective of this paper is to introduce Al<sub>x</sub>Ga<sub>1-x</sub>As as the channel material for TFETs.","PeriodicalId":252016,"journal":{"name":"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134382120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Analysing and improving the performance of software code for Real Time Embedded systems","authors":"Prashant V. Joshi, K. Gurumurthy","doi":"10.1109/ICDCSYST.2014.6926134","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2014.6926134","url":null,"abstract":"Real Time Embedded systems are characterized by the presence of a processor, on which application specific programs have to run. These application specific dedicated programs are called “Embedded Software or Firmware”. Since most of the activity of the processor is controlled by the software, its efficient design plays a key role in the system design. Efficient software or firmware programming also leads to high performance embedded systems. Also in the present scenario ARM based processors are most widely accepted for higher end applications. Hence in this paper we mainly focus on the analysis and optimization of the Embedded software code running on ARM processors. Various techniques like data dependency, loop optimization, etc., are investigated and studied to enhance the performance of the software in terms of code density, speed of operation, both at high level (Embedded-C) and at the assembly level. Comparing the obtained results with the works in the literature, shows an improvement of 40% with respect to the code density and by 30% in the speed of operation. Further efficient embedded firmware like linear convolution and LCD module are designed by using various optimization techniques. All the simulations are carried out using the IAR workbench.","PeriodicalId":252016,"journal":{"name":"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134399674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Implications of transport models on the analog performance of Gate Electrode Workfunction Engineered (GEWE) Silicon Nanowire MOSFET","authors":"N. Gupta, R. Chaujar","doi":"10.1109/ICDCSYST.2014.6926154","DOIUrl":"https://doi.org/10.1109/ICDCSYST.2014.6926154","url":null,"abstract":"The analog applications of different transport models applied on Gate Electrode Workfunction Engineered Silicon Nanowire MOSFET is investigated based on the simulated results from ATLAS and DevEdit. Simulation results show that this device demonstrates a superior performance in terms of better Ion/Ioff ratio in case of HDM, high output impedance in case of DDM, and EBM is efficient for depicting the behavior of sub-micron devices.","PeriodicalId":252016,"journal":{"name":"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132428298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}