A comprehensive analysis of SOI-TFET with novel AlxGa1−xAs channel material

Abstract

In this paper, first time we have analyzed Al_xGa_1-xAs as a novel channel material for SOI based Tunnel Field Effect Transistor (TFET) with V_DD = 0.7. This direct bandgap channel material Al_0.2Ga_0.8As is compared with other channel materials that show the good device features. Using this material as channel we can see that the leakage current is very low as well as the Miller capacitance is also very small as compared to other channel materials. The only disadvantage of using Al_xGa_1-xAs as channel is the low ON current that can be improved by using Si_1-xGe_x as source and drain. The main objective of this paper is to introduce Al_xGa_1-xAs as the channel material for TFETs.