传输模型对栅极工作函数工程(GEWE)硅纳米线MOSFET模拟性能的影响

2014 2nd International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2014-03-06 DOI:10.1109/ICDCSYST.2014.6926154

N. Gupta, R. Chaujar

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引用次数: 10

摘要

基于ATLAS和deveit的模拟结果，研究了不同输运模型在栅极工作函数工程硅纳米线MOSFET上的模拟应用。仿真结果表明，该器件在HDM情况下具有较好的离子/开关比，在DDM情况下具有较高的输出阻抗，并且EBM能够有效地描述亚微米器件的行为。

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Implications of transport models on the analog performance of Gate Electrode Workfunction Engineered (GEWE) Silicon Nanowire MOSFET

The analog applications of different transport models applied on Gate Electrode Workfunction Engineered Silicon Nanowire MOSFET is investigated based on the simulated results from ATLAS and DevEdit. Simulation results show that this device demonstrates a superior performance in terms of better Ion/Ioff ratio in case of HDM, high output impedance in case of DDM, and EBM is efficient for depicting the behavior of sub-micron devices.

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2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)

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