Implications of transport models on the analog performance of Gate Electrode Workfunction Engineered (GEWE) Silicon Nanowire MOSFET

Abstract

The analog applications of different transport models applied on Gate Electrode Workfunction Engineered Silicon Nanowire MOSFET is investigated based on the simulated results from ATLAS and DevEdit. Simulation results show that this device demonstrates a superior performance in terms of better Ion/Ioff ratio in case of HDM, high output impedance in case of DDM, and EBM is efficient for depicting the behavior of sub-micron devices.