{"title":"新型AlxGa1−xAs通道材料SOI-TFET的综合分析","authors":"S. Chander, S. Baishya","doi":"10.1109/ICDCSYST.2014.6926155","DOIUrl":null,"url":null,"abstract":"In this paper, first time we have analyzed Al<sub>x</sub>Ga<sub>1-x</sub>As as a novel channel material for SOI based Tunnel Field Effect Transistor (TFET) with V<sub>DD</sub> = 0.7. This direct bandgap channel material Al<sub>0.2</sub>Ga<sub>0.8</sub>As is compared with other channel materials that show the good device features. Using this material as channel we can see that the leakage current is very low as well as the Miller capacitance is also very small as compared to other channel materials. The only disadvantage of using Al<sub>x</sub>Ga<sub>1-x</sub>As as channel is the low ON current that can be improved by using Si<sub>1-x</sub>Ge<sub>x</sub> as source and drain. The main objective of this paper is to introduce Al<sub>x</sub>Ga<sub>1-x</sub>As as the channel material for TFETs.","PeriodicalId":252016,"journal":{"name":"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A comprehensive analysis of SOI-TFET with novel AlxGa1−xAs channel material\",\"authors\":\"S. Chander, S. Baishya\",\"doi\":\"10.1109/ICDCSYST.2014.6926155\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, first time we have analyzed Al<sub>x</sub>Ga<sub>1-x</sub>As as a novel channel material for SOI based Tunnel Field Effect Transistor (TFET) with V<sub>DD</sub> = 0.7. This direct bandgap channel material Al<sub>0.2</sub>Ga<sub>0.8</sub>As is compared with other channel materials that show the good device features. Using this material as channel we can see that the leakage current is very low as well as the Miller capacitance is also very small as compared to other channel materials. The only disadvantage of using Al<sub>x</sub>Ga<sub>1-x</sub>As as channel is the low ON current that can be improved by using Si<sub>1-x</sub>Ge<sub>x</sub> as source and drain. The main objective of this paper is to introduce Al<sub>x</sub>Ga<sub>1-x</sub>As as the channel material for TFETs.\",\"PeriodicalId\":252016,\"journal\":{\"name\":\"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)\",\"volume\":\"102 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-03-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICDCSYST.2014.6926155\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 2nd International Conference on Devices, Circuits and Systems (ICDCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICDCSYST.2014.6926155","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A comprehensive analysis of SOI-TFET with novel AlxGa1−xAs channel material
In this paper, first time we have analyzed AlxGa1-xAs as a novel channel material for SOI based Tunnel Field Effect Transistor (TFET) with VDD = 0.7. This direct bandgap channel material Al0.2Ga0.8As is compared with other channel materials that show the good device features. Using this material as channel we can see that the leakage current is very low as well as the Miller capacitance is also very small as compared to other channel materials. The only disadvantage of using AlxGa1-xAs as channel is the low ON current that can be improved by using Si1-xGex as source and drain. The main objective of this paper is to introduce AlxGa1-xAs as the channel material for TFETs.
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