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2015 IEEE 12th International Conference on Group IV Photonics (GFP)最新文献

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Silicon photonics for on-chip spectrophotometry 片上分光光度法用硅光子学
2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-10-26 DOI: 10.1109/GROUP4.2015.7305901
Danue Delheke, Ananth Z. Stihramanian, P. Cardile, W. Woestenborghs, A. Ruocco, J. Hoste, Daan Martens, A. Dhakal, P. Bienstman, G. Roelkens, N. Le Thomas, W. Bogaerts, R. Baets
{"title":"Silicon photonics for on-chip spectrophotometry","authors":"Danue Delheke, Ananth Z. Stihramanian, P. Cardile, W. Woestenborghs, A. Ruocco, J. Hoste, Daan Martens, A. Dhakal, P. Bienstman, G. Roelkens, N. Le Thomas, W. Bogaerts, R. Baets","doi":"10.1109/GROUP4.2015.7305901","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305901","url":null,"abstract":"Silicon and Silicon Nitride photonics arc on their way to open the route towards integrated on-chip spectropholometers, Cost, miniaturization, miniaturization, hut also performance advantages ace at the origin of their potential We will discuss several integrated on-chip spectropholometers that are on the eve of commercial lake up.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128459112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Impact of GeOx passivation on Dark Current for wafer-bonded Ge-on-insulator metal-semiconductor-metal photodetector GeOx钝化对晶片键合锗绝缘体金属-半导体-金属光电探测器暗电流的影响
2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-10-26 DOI: 10.1109/GROUP4.2015.7305952
Jian Kang, M. Takenaka, S. Takagi
{"title":"Impact of GeOx passivation on Dark Current for wafer-bonded Ge-on-insulator metal-semiconductor-metal photodetector","authors":"Jian Kang, M. Takenaka, S. Takagi","doi":"10.1109/GROUP4.2015.7305952","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305952","url":null,"abstract":"Effect of GeO4 passivation on Ge-on-insulator MSM photod erectors (PDs) formed by wafer bonding is investigated. We found GeOx passivation of both top and bottom Ge interfaces is important for dark current suppression in MSM PDs.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129186582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Carrier lifetime assessment in integrated Ge waveguide devices 集成Ge波导器件的载波寿命评估
2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-10-26 DOI: 10.1109/GROUP4.2015.7305916
S. Srinivasan, M. Pantouvaki, P. Verheyen, G. Lepaee, P. Absil, J. Van Campenhout, D. Van ThouAout
{"title":"Carrier lifetime assessment in integrated Ge waveguide devices","authors":"S. Srinivasan, M. Pantouvaki, P. Verheyen, G. Lepaee, P. Absil, J. Van Campenhout, D. Van ThouAout","doi":"10.1109/GROUP4.2015.7305916","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305916","url":null,"abstract":"Carrier lifetimes in Ge waveguides on Si are deduced from time-resolved pump-probe spectroscopy. For a 1 μm wide Ge waveguide, a lifetime of 1.6 ns is estimated for a carrier density of around 2×10<sup>19</sup>cm<sup>-3</sup>.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115108906","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Mid-infrared intersubband absorption in p-Ge/SiGe quantum wells grown on Si Si上生长的p-Ge/SiGe量子阱的中红外亚带间吸收
2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-10-23 DOI: 10.1109/GROUP4.2015.7305931
K. Gallacher, A. Ballabio, R. Millar, A. Samarelli, J. Frigerio, D. Chrastina, G. Isella, L. Baldassarre, M. Ortolani, E. Sakat, P. Biagioni, D. Paul
{"title":"Mid-infrared intersubband absorption in p-Ge/SiGe quantum wells grown on Si","authors":"K. Gallacher, A. Ballabio, R. Millar, A. Samarelli, J. Frigerio, D. Chrastina, G. Isella, L. Baldassarre, M. Ortolani, E. Sakat, P. Biagioni, D. Paul","doi":"10.1109/GROUP4.2015.7305931","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305931","url":null,"abstract":"Intersubband absorption from p-Ge quantum wells grown on Si is demonstrated. The absorption can be tuned by adjusting the quantum well thickness. FTIR transmission measurements on as-grown wafers show broad absorption at mid-infrared wavelengths.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122904197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Heavily phosphorous-doped Germanium thin films for mid-infrared plasmonics 中红外等离子体的重掺磷锗薄膜
2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-10-23 DOI: 10.1109/GROUP4.2015.7305964
J. Frigerio, L. Baldassarre, E. Sakat, A. Samarelli, K. Gallacher, M. Fischer, D. Brida, D. Paul, G. Isella, P. Biagioni, M. Ortolani
{"title":"Heavily phosphorous-doped Germanium thin films for mid-infrared plasmonics","authors":"J. Frigerio, L. Baldassarre, E. Sakat, A. Samarelli, K. Gallacher, M. Fischer, D. Brida, D. Paul, G. Isella, P. Biagioni, M. Ortolani","doi":"10.1109/GROUP4.2015.7305964","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305964","url":null,"abstract":"Heavily doped Ge thin films grown on different substrates have been investigated by infrared (IR) reflectometry. Screened plasma frequency and losses have been determined to assess the possibilities and limitations of Ge for mid infrared plasmonic.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116095420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Subwavelength grating filters in SOI SOI中的亚波长光栅滤波器
2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-08-28 DOI: 10.1109/GROUP4.2015.7305960
Junjia Wang, I. Glesk, Lawrence R. Chen
{"title":"Subwavelength grating filters in SOI","authors":"Junjia Wang, I. Glesk, Lawrence R. Chen","doi":"10.1109/GROUP4.2015.7305960","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305960","url":null,"abstract":"We denwnstrate subwavelength grating filters in silicon-on-insulator based on Bragg gratings and racetrack resonators. The Bragg grating has a 3 dB bandwidth = 0.5 nm and reflectivity > 90%. the resonator has a 3 dB bandwidth = 1 nm and extinction ratio > 33 dB.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123702332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Silicon photonic subwavelength grating based integrated optical delay lines 基于硅光子亚波长光栅的集成光延迟线
2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-08-28 DOI: 10.1109/GROUP4.2015.7305983
R. Ashrafi, Junjia Wang, I. Glesk, Lawrence R. Chen
{"title":"Silicon photonic subwavelength grating based integrated optical delay lines","authors":"R. Ashrafi, Junjia Wang, I. Glesk, Lawrence R. Chen","doi":"10.1109/GROUP4.2015.7305983","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305983","url":null,"abstract":"We demonstrate a novel integrated optical delay line approach based on silicon subwavelength gratings (SWGs). By 30% change in duty-cycle of SWG waveguides with a same length of 8mm to control their group index, up to ~30ps time-delay was achieved.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130506034","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Wavelength division demultiplexer and integrated III-V semiconductor lasers on a silicon photonics platform with microbubble manipulation 波分解复用器和集成III-V半导体激光器在硅光子学平台与微泡操作
2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-08-01 DOI: 10.1109/GROUP4.2015.7305926
Youngho Jung, D. Thomson, Youfang Hu, Jaeho Shim, F. Gardes, G. Mashanovich, Kyoungsik Yu, J. Wilkinson, G. Reed
{"title":"Wavelength division demultiplexer and integrated III-V semiconductor lasers on a silicon photonics platform with microbubble manipulation","authors":"Youngho Jung, D. Thomson, Youfang Hu, Jaeho Shim, F. Gardes, G. Mashanovich, Kyoungsik Yu, J. Wilkinson, G. Reed","doi":"10.1109/GROUP4.2015.7305926","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305926","url":null,"abstract":"We present details of a 1×4 angled multimode interferometer (de)multiplexer, integrated with a microdisk laser as a demonstration of the way in which the compound semiconductor lasers can be coupled to silicon devices for a multitude of applications.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121261127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Coarse wavelength division multiplexer on silicon-on-insulator for 100 GbE 用于100gbe的绝缘体上硅的粗波分复用器
2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-08-01 DOI: 10.1109/GROUP4.2015.7305928
S. Dwivedi, P. De Heyn, P. Absil, J. Van Campenhout, W. Bogaerts
{"title":"Coarse wavelength division multiplexer on silicon-on-insulator for 100 GbE","authors":"S. Dwivedi, P. De Heyn, P. Absil, J. Van Campenhout, W. Bogaerts","doi":"10.1109/GROUP4.2015.7305928","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305928","url":null,"abstract":"A four-channel cascaded MZI based de-multiplexer at O-band with coarse channel spacing of 20 nm and band flatness of 13 nm is demonstrated on silicon-on-insulator. The device shows a mean crosstalk and insertion loss below -16 dB and 2.5 dB.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116176303","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
Low-loss silicon rectangular waveguides fabricated by anisotoropic wet etching for roughness reduction 用各向异性湿法蚀刻制备低损耗硅矩形波导以降低粗糙度
2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-08-01 DOI: 10.1109/GROUP4.2015.7305962
H. Arimoto, M. Husain, A. Prasmusinto, K. Debnath, A. Al-Attili, R. Petra, H. Chong, G. Reed, S. Saito
{"title":"Low-loss silicon rectangular waveguides fabricated by anisotoropic wet etching for roughness reduction","authors":"H. Arimoto, M. Husain, A. Prasmusinto, K. Debnath, A. Al-Attili, R. Petra, H. Chong, G. Reed, S. Saito","doi":"10.1109/GROUP4.2015.7305962","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305962","url":null,"abstract":"Simple fabrication of low-loss Si/SiO2 waveguides with a flat side wall is proposed. Waveguides oriented to the <;11-2> direction on the Si (110) plane are fabricated by anisotropic wet etching and the lowest propagation loss is 1.4 dB/cm.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124026604","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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