Heavily phosphorous-doped Germanium thin films for mid-infrared plasmonics

2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-10-23 DOI:10.1109/GROUP4.2015.7305964

J. Frigerio, L. Baldassarre, E. Sakat, A. Samarelli, K. Gallacher, M. Fischer, D. Brida, D. Paul, G. Isella, P. Biagioni, M. Ortolani

引用次数: 0

Abstract

Heavily doped Ge thin films grown on different substrates have been investigated by infrared (IR) reflectometry. Screened plasma frequency and losses have been determined to assess the possibilities and limitations of Ge for mid infrared plasmonic.

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中红外等离子体的重掺磷锗薄膜

用红外反射法研究了在不同衬底上生长的重掺杂锗薄膜。筛选的等离子体频率和损耗已经确定，以评估Ge中红外等离子体的可能性和局限性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2015 IEEE 12th International Conference on Group IV Photonics (GFP)

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