中红外等离子体的重掺磷锗薄膜

2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-10-23 DOI:10.1109/GROUP4.2015.7305964

J. Frigerio, L. Baldassarre, E. Sakat, A. Samarelli, K. Gallacher, M. Fischer, D. Brida, D. Paul, G. Isella, P. Biagioni, M. Ortolani

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引用次数: 0

摘要

用红外反射法研究了在不同衬底上生长的重掺杂锗薄膜。筛选的等离子体频率和损耗已经确定，以评估Ge中红外等离子体的可能性和局限性。

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Heavily phosphorous-doped Germanium thin films for mid-infrared plasmonics

Heavily doped Ge thin films grown on different substrates have been investigated by infrared (IR) reflectometry. Screened plasma frequency and losses have been determined to assess the possibilities and limitations of Ge for mid infrared plasmonic.

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2015 IEEE 12th International Conference on Group IV Photonics (GFP)

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