集成Ge波导器件的载波寿命评估

2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-10-26 DOI:10.1109/GROUP4.2015.7305916

S. Srinivasan, M. Pantouvaki, P. Verheyen, G. Lepaee, P. Absil, J. Van Campenhout, D. Van ThouAout

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引用次数: 3

摘要

利用时间分辨泵浦-探针光谱法推导出硅基锗波导中的载流子寿命。对于1 μm宽的Ge波导，当载流子密度约为2×1019cm-3时，其寿命估计为1.6 ns。

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Carrier lifetime assessment in integrated Ge waveguide devices

Carrier lifetimes in Ge waveguides on Si are deduced from time-resolved pump-probe spectroscopy. For a 1 μm wide Ge waveguide, a lifetime of 1.6 ns is estimated for a carrier density of around 2×10¹⁹cm^-3.

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2015 IEEE 12th International Conference on Group IV Photonics (GFP)

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