Carrier lifetime assessment in integrated Ge waveguide devices

S. Srinivasan, M. Pantouvaki, P. Verheyen, G. Lepaee, P. Absil, J. Van Campenhout, D. Van ThouAout
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引用次数: 3

Abstract

Carrier lifetimes in Ge waveguides on Si are deduced from time-resolved pump-probe spectroscopy. For a 1 μm wide Ge waveguide, a lifetime of 1.6 ns is estimated for a carrier density of around 2×1019cm-3.
集成Ge波导器件的载波寿命评估
利用时间分辨泵浦-探针光谱法推导出硅基锗波导中的载流子寿命。对于1 μm宽的Ge波导,当载流子密度约为2×1019cm-3时,其寿命估计为1.6 ns。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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