Si上生长的p-Ge/SiGe量子阱的中红外亚带间吸收

2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-10-23 DOI:10.1109/GROUP4.2015.7305931

K. Gallacher, A. Ballabio, R. Millar, A. Samarelli, J. Frigerio, D. Chrastina, G. Isella, L. Baldassarre, M. Ortolani, E. Sakat, P. Biagioni, D. Paul

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引用次数: 0

摘要

证明了生长在硅上的p-Ge量子阱的子带间吸收。可以通过调节量子阱厚度来调节吸收。在生长硅片上的FTIR透射测量显示在中红外波段有广泛的吸收。

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Mid-infrared intersubband absorption in p-Ge/SiGe quantum wells grown on Si

Intersubband absorption from p-Ge quantum wells grown on Si is demonstrated. The absorption can be tuned by adjusting the quantum well thickness. FTIR transmission measurements on as-grown wafers show broad absorption at mid-infrared wavelengths.

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来源期刊

2015 IEEE 12th International Conference on Group IV Photonics (GFP)

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