Coarse wavelength division multiplexer on silicon-on-insulator for 100 GbE

2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-08-01 DOI:10.1109/GROUP4.2015.7305928

S. Dwivedi, P. De Heyn, P. Absil, J. Van Campenhout, W. Bogaerts

引用次数: 23

Abstract

A four-channel cascaded MZI based de-multiplexer at O-band with coarse channel spacing of 20 nm and band flatness of 13 nm is demonstrated on silicon-on-insulator. The device shows a mean crosstalk and insertion loss below -16 dB and 2.5 dB.

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用于100gbe的绝缘体上硅的粗波分复用器

在绝缘体上硅片上设计了一种粗通道间距为20 nm，带状平坦度为13 nm的o波段四通道级联MZI解复用器。该器件的平均串扰和插入损耗分别低于-16 dB和2.5 dB。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2015 IEEE 12th International Conference on Group IV Photonics (GFP)

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