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2015 IEEE 12th International Conference on Group IV Photonics (GFP)最新文献

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Silicon-on-insulator spatial heterodyne spectrometer chip for the mid-infrared 绝缘体上硅空间外差中红外光谱仪芯片
2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-10-26 DOI: 10.1109/GROUP4.2015.7305903
M. Nedeljkovic, A. Khokhar, G. Mashanovich, A. V. Velasco, P. Cheben
{"title":"Silicon-on-insulator spatial heterodyne spectrometer chip for the mid-infrared","authors":"M. Nedeljkovic, A. Khokhar, G. Mashanovich, A. V. Velasco, P. Cheben","doi":"10.1109/GROUP4.2015.7305903","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305903","url":null,"abstract":"We demonstrate fur the first linio a silicon-on-insulator spatial hoterodyne waveguide spectrometer chip operating in i ho mid-infrared. The device comprises a MMI splitting tree, followed by an array of 42 Mach-Zehnder interferometers with linearly increasing optical path differences. The fabricated device was characterized in the 3717-3772 nm wavelength range by retrieving the spectral line of a quantum cascade laser line, with a wavelength resolution of 2.8 nm.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131688979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Wide FSR silicon-on-insulator microring resonator with bent couplers 弯曲耦合器的宽FSR绝缘体上硅微环谐振器
2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-10-26 DOI: 10.1109/GROUP4.2015.7305966
N. Eid, Hasilha Jayatilleka, M. Caverley, S. Shekhar, L. Chrostowski, N. Jaeger
{"title":"Wide FSR silicon-on-insulator microring resonator with bent couplers","authors":"N. Eid, Hasilha Jayatilleka, M. Caverley, S. Shekhar, L. Chrostowski, N. Jaeger","doi":"10.1109/GROUP4.2015.7305966","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305966","url":null,"abstract":"This work demonstrates a silicon-on-insulator microring resonator with a 2.75 μm radius, fabricated using 248 nm optical lithography, that employs bent couplers and achieves a 33.4 nm FSR and a 3-dB bandwidth of 25 GHz.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132840145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High-speed 8×8 electro-optic switch matrix based on silicon PIN structure waveguides 基于硅PIN结构波导的高速8×8电光开关矩阵
2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-10-26 DOI: 10.1109/GROUP4.2015.7305981
T. Chu, Lei Qiao, Weijie Tang
{"title":"High-speed 8×8 electro-optic switch matrix based on silicon PIN structure waveguides","authors":"T. Chu, Lei Qiao, Weijie Tang","doi":"10.1109/GROUP4.2015.7305981","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305981","url":null,"abstract":"A high-speed non-blocking silicon 8×8 switch matrix was demonstrated based on Benes network and carrier-dispersion electro-optic controlling. The extinction ratios are 18.3~25.5dB on “all-Cross” and 13.3~19.0dB on “all-Bar” status at 1550nm.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133921543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Single SiGe quantum dots deterministically aligned to the antinodes of a photonic crystal cavity mode 单SiGe量子点确定地对准光子晶体腔模式的天线
2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-10-26 DOI: 10.1109/GROUP4.2015.7305943
M. Schatzl, F. Hackl, M. Glaser, T. Fromherz, F. Schaffler
{"title":"Single SiGe quantum dots deterministically aligned to the antinodes of a photonic crystal cavity mode","authors":"M. Schatzl, F. Hackl, M. Glaser, T. Fromherz, F. Schaffler","doi":"10.1109/GROUP4.2015.7305943","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305943","url":null,"abstract":"We fabricated photonic crystal nanocavities containing single SiGe QDs deterministically aligned to the antinodes of a cavity mode. Cavity coupling drastically enhances the vertical QD emission and allows, for the first time, the optical characterization of a single SiGe QD. For low excitation intensities, a single exponential PL decay with a time constant of 22ns at T=10K is observed for such a coupled QD-PhC-cavity system.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134114197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Pd Schottky barrier photodetector integrated with LOCOS-defined SOI waveguides 与locos定义的SOI波导集成的Pd肖特基势垒光电探测器
2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-10-26 DOI: 10.1109/GROUP4.2015.7305975
Shuxia Li, N. G. Tarr, W. Ye, P. Berini
{"title":"Pd Schottky barrier photodetector integrated with LOCOS-defined SOI waveguides","authors":"Shuxia Li, N. G. Tarr, W. Ye, P. Berini","doi":"10.1109/GROUP4.2015.7305975","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305975","url":null,"abstract":"Palladium on n-type silicon Schottky barrier photodetectors have been integrated with SOI optical waveguides. The diodes gave optical responsivity of 330 nA/mW at 1310 nm. Dark current density is less than 2×10<sup>-8</sup> Acm<sup>-2</sup> at 1 volt reverse bias.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114706880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ring resonator memristor with electric input and optical readout functionality 具有电输入和光学读出功能的环形谐振器忆阻器
2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-10-26 DOI: 10.1109/GROUP4.2015.7305945
Hongchen Yu, Minghua Chen, Yu Li, Fangjian Xing, Hong-wei Chen, Sigang Yang, S. Xie
{"title":"Ring resonator memristor with electric input and optical readout functionality","authors":"Hongchen Yu, Minghua Chen, Yu Li, Fangjian Xing, Hong-wei Chen, Sigang Yang, S. Xie","doi":"10.1109/GROUP4.2015.7305945","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305945","url":null,"abstract":"A memristor based on the nonlinear effect in the ultra-high Q Si3N4 ring resonator has been firstly proposed and experimentally demonstrated, which is potential to become an important building block in future optoelectronic system.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123934948","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Hybrid silicon photonics and electronics solutions for communications, sensing, and imaging 用于通信、传感和成像的混合硅光子和电子解决方案
2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-10-26 DOI: 10.1109/GROUP4.2015.7305902
A. Hajimiri
{"title":"Hybrid silicon photonics and electronics solutions for communications, sensing, and imaging","authors":"A. Hajimiri","doi":"10.1109/GROUP4.2015.7305902","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305902","url":null,"abstract":"Silicon photonics offer large bandwidths and low-loss delay, while integrated electronics can provide gain and complex signal processing with much lower overhead. Here, we will discuss a few examples of such hybrid solutions to demonstrate the potential of a more holistic approach to silicon integrated systems.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130495751","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optical trapping of Au nanoparticles using SOI photonic crystal slot cavity at sub-mW laser power 在亚毫瓦激光功率下利用SOI光子晶体槽腔捕获金纳米粒子
2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-10-26 DOI: 10.1109/GROUP4.2015.7305978
S. H. Mirsadeghi, Jonathan Massey-Allard, Jeff F. Young
{"title":"Optical trapping of Au nanoparticles using SOI photonic crystal slot cavity at sub-mW laser power","authors":"S. H. Mirsadeghi, Jonathan Massey-Allard, Jeff F. Young","doi":"10.1109/GROUP4.2015.7305978","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305978","url":null,"abstract":"Size and shape sensitive trapping of Au nanoparticles in silicon-on-insulator photonic crystal slot microcavjties at sub-mW power is demonstrated. Coupling to the microcavity via slot waveguides is shown to significantly enhance the transmission signal of the devices.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132300995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A wavelength-selective polarization rotating reflector using a partially-etched asymmetric Bragg grating on an SOI strip waveguide 在SOI带状波导上采用部分蚀刻非对称布拉格光栅的波长选择性偏振旋转反射器
2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-10-26 DOI: 10.1109/GROUP4.2015.7305898
Han Yun, J. Flueckiger, Zhitian Chen, Yun Wang, L. Chrostowski, N. Jaeger
{"title":"A wavelength-selective polarization rotating reflector using a partially-etched asymmetric Bragg grating on an SOI strip waveguide","authors":"Han Yun, J. Flueckiger, Zhitian Chen, Yun Wang, L. Chrostowski, N. Jaeger","doi":"10.1109/GROUP4.2015.7305898","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305898","url":null,"abstract":"We report on a wave length-selective polarization rotating reflector using a partially-etched asymmetric Bragg grating on a silicon-on-insulator strip waveguide that has a maximum polarization-extinction-ratio greater than 27 dB and a 3-dB bandwidth of 2.6 nm.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128379063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Strained Ge nanowire with high-Q optical cavity for Ge laser applications 用于锗激光器的高q光腔应变锗纳米线
2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-10-26 DOI: 10.1109/GROUP4.2015.7305989
D. Nam, J. Petykiewicz, D. Sukhdeo, Shashank Gupta, S. Buckley, J. Vučković, K. Saraswat
{"title":"Strained Ge nanowire with high-Q optical cavity for Ge laser applications","authors":"D. Nam, J. Petykiewicz, D. Sukhdeo, Shashank Gupta, S. Buckley, J. Vučković, K. Saraswat","doi":"10.1109/GROUP4.2015.7305989","DOIUrl":"https://doi.org/10.1109/GROUP4.2015.7305989","url":null,"abstract":"We present a novel structure that simultaneously achieves high tensile strain, pseudo-heterostructure, and high-Q optical cavity in a pure Ge layer. Employing our structure in a GeSn layer will enable a truly practical Si-compatible laser.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"5 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123665637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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