与locos定义的SOI波导集成的Pd肖特基势垒光电探测器

2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-10-26 DOI:10.1109/GROUP4.2015.7305975

Shuxia Li, N. G. Tarr, W. Ye, P. Berini

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引用次数: 0

摘要

钯基n型硅肖特基势垒光电探测器已与SOI光波导集成。该二极管在1310 nm处的光学响应度为330 nA/mW。在1伏反向偏置时，暗电流密度小于2×10-8 μ m-2。

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Pd Schottky barrier photodetector integrated with LOCOS-defined SOI waveguides

Palladium on n-type silicon Schottky barrier photodetectors have been integrated with SOI optical waveguides. The diodes gave optical responsivity of 330 nA/mW at 1310 nm. Dark current density is less than 2×10^-8 Acm^-2 at 1 volt reverse bias.

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2015 IEEE 12th International Conference on Group IV Photonics (GFP)

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