Pd Schottky barrier photodetector integrated with LOCOS-defined SOI waveguides

Shuxia Li, N. G. Tarr, W. Ye, P. Berini
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Abstract

Palladium on n-type silicon Schottky barrier photodetectors have been integrated with SOI optical waveguides. The diodes gave optical responsivity of 330 nA/mW at 1310 nm. Dark current density is less than 2×10-8 Acm-2 at 1 volt reverse bias.
与locos定义的SOI波导集成的Pd肖特基势垒光电探测器
钯基n型硅肖特基势垒光电探测器已与SOI光波导集成。该二极管在1310 nm处的光学响应度为330 nA/mW。在1伏反向偏置时,暗电流密度小于2×10-8 μ m-2。
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