{"title":"具有电输入和光学读出功能的环形谐振器忆阻器","authors":"Hongchen Yu, Minghua Chen, Yu Li, Fangjian Xing, Hong-wei Chen, Sigang Yang, S. Xie","doi":"10.1109/GROUP4.2015.7305945","DOIUrl":null,"url":null,"abstract":"A memristor based on the nonlinear effect in the ultra-high Q Si3N4 ring resonator has been firstly proposed and experimentally demonstrated, which is potential to become an important building block in future optoelectronic system.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Ring resonator memristor with electric input and optical readout functionality\",\"authors\":\"Hongchen Yu, Minghua Chen, Yu Li, Fangjian Xing, Hong-wei Chen, Sigang Yang, S. Xie\",\"doi\":\"10.1109/GROUP4.2015.7305945\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A memristor based on the nonlinear effect in the ultra-high Q Si3N4 ring resonator has been firstly proposed and experimentally demonstrated, which is potential to become an important building block in future optoelectronic system.\",\"PeriodicalId\":244331,\"journal\":{\"name\":\"2015 IEEE 12th International Conference on Group IV Photonics (GFP)\",\"volume\":\"45 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-10-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE 12th International Conference on Group IV Photonics (GFP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2015.7305945\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2015.7305945","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ring resonator memristor with electric input and optical readout functionality
A memristor based on the nonlinear effect in the ultra-high Q Si3N4 ring resonator has been firstly proposed and experimentally demonstrated, which is potential to become an important building block in future optoelectronic system.