High-speed 8×8 electro-optic switch matrix based on silicon PIN structure waveguides

Abstract

A high-speed non-blocking silicon 8×8 switch matrix was demonstrated based on Benes network and carrier-dispersion electro-optic controlling. The extinction ratios are 18.3~25.5dB on “all-Cross” and 13.3~19.0dB on “all-Bar” status at 1550nm.