D. Nam, J. Petykiewicz, D. Sukhdeo, Shashank Gupta, S. Buckley, J. Vučković, K. Saraswat
{"title":"用于锗激光器的高q光腔应变锗纳米线","authors":"D. Nam, J. Petykiewicz, D. Sukhdeo, Shashank Gupta, S. Buckley, J. Vučković, K. Saraswat","doi":"10.1109/GROUP4.2015.7305989","DOIUrl":null,"url":null,"abstract":"We present a novel structure that simultaneously achieves high tensile strain, pseudo-heterostructure, and high-Q optical cavity in a pure Ge layer. Employing our structure in a GeSn layer will enable a truly practical Si-compatible laser.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"5 4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Strained Ge nanowire with high-Q optical cavity for Ge laser applications\",\"authors\":\"D. Nam, J. Petykiewicz, D. Sukhdeo, Shashank Gupta, S. Buckley, J. Vučković, K. Saraswat\",\"doi\":\"10.1109/GROUP4.2015.7305989\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a novel structure that simultaneously achieves high tensile strain, pseudo-heterostructure, and high-Q optical cavity in a pure Ge layer. Employing our structure in a GeSn layer will enable a truly practical Si-compatible laser.\",\"PeriodicalId\":244331,\"journal\":{\"name\":\"2015 IEEE 12th International Conference on Group IV Photonics (GFP)\",\"volume\":\"5 4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-10-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE 12th International Conference on Group IV Photonics (GFP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GROUP4.2015.7305989\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2015.7305989","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Strained Ge nanowire with high-Q optical cavity for Ge laser applications
We present a novel structure that simultaneously achieves high tensile strain, pseudo-heterostructure, and high-Q optical cavity in a pure Ge layer. Employing our structure in a GeSn layer will enable a truly practical Si-compatible laser.