{"title":"Ring resonator memristor with electric input and optical readout functionality","authors":"Hongchen Yu, Minghua Chen, Yu Li, Fangjian Xing, Hong-wei Chen, Sigang Yang, S. Xie","doi":"10.1109/GROUP4.2015.7305945","DOIUrl":null,"url":null,"abstract":"A memristor based on the nonlinear effect in the ultra-high Q Si3N4 ring resonator has been firstly proposed and experimentally demonstrated, which is potential to become an important building block in future optoelectronic system.","PeriodicalId":244331,"journal":{"name":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-10-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE 12th International Conference on Group IV Photonics (GFP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GROUP4.2015.7305945","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A memristor based on the nonlinear effect in the ultra-high Q Si3N4 ring resonator has been firstly proposed and experimentally demonstrated, which is potential to become an important building block in future optoelectronic system.