Impact of GeOx passivation on Dark Current for wafer-bonded Ge-on-insulator metal-semiconductor-metal photodetector

2015 IEEE 12th International Conference on Group IV Photonics (GFP) Pub Date : 2015-10-26 DOI:10.1109/GROUP4.2015.7305952

Jian Kang, M. Takenaka, S. Takagi

引用次数: 0

Abstract

Effect of GeO4 passivation on Ge-on-insulator MSM photod erectors (PDs) formed by wafer bonding is investigated. We found GeOx passivation of both top and bottom Ge interfaces is important for dark current suppression in MSM PDs.

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GeOx钝化对晶片键合锗绝缘体金属-半导体-金属光电探测器暗电流的影响

研究了ge4钝化对晶圆键合形成的绝缘子上锗(ge -on-绝缘子)MSM光电竖片(PDs)的影响。我们发现顶部和底部Ge界面的GeOx钝化对MSM pd中的暗电流抑制都很重要。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2015 IEEE 12th International Conference on Group IV Photonics (GFP)

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