2011 International Reliability Physics Symposium最新文献_第4页

Long term isothermal reliability of copper wire bonded to thin 6.5 µm aluminum 铜线粘接6.5µm薄铝的长期等温可靠性

2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784557

F. Classe, S. Gaddamraja

{"title":"Long term isothermal reliability of copper wire bonded to thin 6.5 µm aluminum","authors":"F. Classe, S. Gaddamraja","doi":"10.1109/IRPS.2011.5784557","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784557","url":null,"abstract":"In long term reliability evaluations of Spansion memory products built using copper (Cu) wire bonding in lieu of gold (Au) wire for package-to-die interconnection, results indicated acceptable reliability performance of the copper-aluminum (Cu-Al) bond. Some differences, however, were observed when compared to gold-aluminum (Au-Al) bonds used as a control. In order to determine if these differences represented a true reliability concern, a series of experiments were run on a variety of process technologies (from 200nm to 65nm) to determine wear-out failure mechanisms of these Cu bonds and their associated apparent activation energies. Isothermal reliability tests at three temperatures (150 °C, 175 °C, and 200 °C) were performed using uncoated 0.9 mil Cu wire (with 0.9 mil Au wire as a control) bonded to functional flash die from a variety of process technologies. All bonding was done to 6.5 µm thick Aluminum-Copper (Al-0.5% Cu) bond pads. Bond shear and wire pull values were measured at each readpoint and the experiments were continued through extended long term readpoints to insure that products were stressed until failure. The primary failure mechanism identified was interfacial cracking between the copper bond and the intermetallic layer, starting at the rim of the bond. The apparent activation energy computed for the Cu-Al bond interfacial cracking was 0.70 eV. Subsequent calculations of expected product lifetime in various usage models using this Ea show that the Cu wire bonding provides more than adequate reliability lifetime for all expected product usage scenarios.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"525 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133321870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 15

Impact of air-induced poly-Si/oxynitride interface layer degradation on gate-edge leakage 空气诱导多晶硅/氮氧化物界面层退化对栅边泄漏的影响

2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784497

Ziyuan Liu, S. Ito, Tomoya Saito, S. Chang, A. Ogawa, S. Horii, T. Horikawa, M. Wilde, K. Fukutani, T. Chikyow

引用次数: 0

Variability of resistive switching memories and its impact on crossbar array performance 电阻开关存储器的可变性及其对交叉栅阵列性能的影响

2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784590

An Chen, M. Lin

引用次数: 124

Behaviors and physical degradation of HfSiON MOSFET linked to strained CESL performance booster 与应变CESL性能助推器相关的HfSiON MOSFET的行为和物理退化

2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784592

Kidan Bae, M. Jin, H. Lim, Lira Hwang, Dongseok Shin, Junekyun Park, Jin-Chul Heo, Jongho Lee, Jinho Do, Ilchan Bae, Chul-Hee Jeon, Jongwoo Park

引用次数: 2

Space radiation effects and reliability considerations for the proposed Jupiter Europa Orbiter 拟建木星-木卫二轨道器的空间辐射效应和可靠性考虑

2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784471

A. Johnston

引用次数: 3

A robust reliability methodology for accurately predicting Bias Temperature Instability induced circuit performance degradation in HKMG CMOS 一种准确预测HKMG CMOS偏置温度不稳定性诱发电路性能退化的可靠方法

2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784559

D. Ioannou, K. Zhao, A. Bansal, B. Linder, R. Bolam, E. Cartier, J.J. Kim, R. Rao, G. La Rosa, G. Massey, M. Hauser, K. Das, J. Stathis, J. Aitken, D. Badami, S. Mittl

{"title":"A robust reliability methodology for accurately predicting Bias Temperature Instability induced circuit performance degradation in HKMG CMOS","authors":"D. Ioannou, K. Zhao, A. Bansal, B. Linder, R. Bolam, E. Cartier, J.J. Kim, R. Rao, G. La Rosa, G. Massey, M. Hauser, K. Das, J. Stathis, J. Aitken, D. Badami, S. Mittl","doi":"10.1109/IRPS.2011.5784559","DOIUrl":"https://doi.org/10.1109/IRPS.2011.5784559","url":null,"abstract":"A robust reliability characterization / modeling approach for accurately predicting Bias Temperature Instability (BTI) induced circuit performance degradation in High-k Metal Gate (HKMG) CMOS is presented. A series of device level stress experiments employing both AC and DC stress/relax BTI measurements are undertaken to characterize FET's threshold voltage instability response to a dynamic (inverter type) operation. Results from the AC stress experiments demonstrate that VT instability is frequency independent, an observation that suggests that VT degradation under AC stress can be equivalently measured through the simpler DC stress/relax sequence. An AC BTI model is developed that accurately captures the critical BTI relaxation effect through the DC stress/relax predictions on duty cycle dependence. A Ring Oscillator (RO) circuit is used as a model verification vehicle. Excellent agreement is demonstrated between the frequency degradation measurements obtained with a newly developed Ultra-Fast On-The-Fly (OTF) measurement technique optimized for BTI and the AC BTI model based RO simulations.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129504684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 14

New investigation of hot carrier degradation of RF small-signal parameters in high-k/metal gate nMOSFETs 高k/金属栅nmosfet射频小信号参数热载流子退化的新研究

2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784516

H. Sagong, C. Kang, C. Sohn, Min-Sang Park, D. Choi, E. Jeong, Jack C. Lee, Y. Jeong

引用次数: 2

Resistance increase due to electromigration induced depletion under TSV TSV下电迁移引起的损耗导致电阻增加

2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784499

T. Frank, C. Chappaz, P. Leduc, L. Arnaud, F. Lorut, S. Moreau, A. Thuaire, R. El Farhane, L. Anghel

引用次数: 75

Improving lifetime of Cu interconnects with adding compressive stress at cathode end 在阴极端增加压应力可提高铜互连的使用寿命

2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784571

L. Arnaud, P. Lamontagne, E. Petitprez, R. Galand

引用次数: 2

Low-energy UV effects on Organic Thin-Film-Transistors 有机薄膜晶体管的低能紫外效应

2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI: 10.1109/IRPS.2011.5784462

N. Wrachien, A. Cester, D. Bari, G. Meneghesso, J. Kováč, J. Jakabovic, M. Sokolský, D. Donoval, J. Cirák

引用次数: 8