高k/金属栅nmosfet射频小信号参数热载流子退化的新研究

2011 International Reliability Physics Symposium Pub Date : 2011-04-10 DOI:10.1109/IRPS.2011.5784516

H. Sagong, C. Kang, C. Sohn, Min-Sang Park, D. Choi, E. Jeong, Jack C. Lee, Y. Jeong

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引用次数: 2

摘要

通过直流和射频测量，研究了高k/金属栅极nmosfet中热载子效应对射频小信号参数的影响。为了解释这种新型的热载流子诱导的降解，我们提出了一种改进的表面沟道电阻模型，该模型可以应用于传统的SiO2和高k nmosfet。

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New investigation of hot carrier degradation of RF small-signal parameters in high-k/metal gate nMOSFETs

Hot carrier effects on RF small-signal parameters in high-k/metal gate nMOSFETs are characterized by DC and RF measurements. To explain the novel hot carrier-induced degradation, we suggest a modified surface channel resistance model that can be applied to both conventional SiO2 and high-k nMOSFETs.

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2011 International Reliability Physics Symposium

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