N. Wrachien, A. Cester, D. Bari, G. Meneghesso, J. Kováč, J. Jakabovic, M. Sokolský, D. Donoval, J. Cirák
{"title":"有机薄膜晶体管的低能紫外效应","authors":"N. Wrachien, A. Cester, D. Bari, G. Meneghesso, J. Kováč, J. Jakabovic, M. Sokolský, D. Donoval, J. Cirák","doi":"10.1109/IRPS.2011.5784462","DOIUrl":null,"url":null,"abstract":"We subjected Organic Thin-Film-Transistors with different gate dielectrics interface treatment to visible light and low energy UV irradiation. Devices with silicon nanoparticles only feature a remarkable temporary charge trapping, regardless the irradiation wavelength. On the contrary, devices without silicon nanoparticles feature temporary trapped charge under visible light, and permanent mobility degradation if they are irradiated with a wavelength shorter than 420nm.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Low-energy UV effects on Organic Thin-Film-Transistors\",\"authors\":\"N. Wrachien, A. Cester, D. Bari, G. Meneghesso, J. Kováč, J. Jakabovic, M. Sokolský, D. Donoval, J. Cirák\",\"doi\":\"10.1109/IRPS.2011.5784462\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We subjected Organic Thin-Film-Transistors with different gate dielectrics interface treatment to visible light and low energy UV irradiation. Devices with silicon nanoparticles only feature a remarkable temporary charge trapping, regardless the irradiation wavelength. On the contrary, devices without silicon nanoparticles feature temporary trapped charge under visible light, and permanent mobility degradation if they are irradiated with a wavelength shorter than 420nm.\",\"PeriodicalId\":242672,\"journal\":{\"name\":\"2011 International Reliability Physics Symposium\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-04-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.2011.5784462\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2011.5784462","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low-energy UV effects on Organic Thin-Film-Transistors
We subjected Organic Thin-Film-Transistors with different gate dielectrics interface treatment to visible light and low energy UV irradiation. Devices with silicon nanoparticles only feature a remarkable temporary charge trapping, regardless the irradiation wavelength. On the contrary, devices without silicon nanoparticles feature temporary trapped charge under visible light, and permanent mobility degradation if they are irradiated with a wavelength shorter than 420nm.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
