{"title":"在阴极端增加压应力可提高铜互连的使用寿命","authors":"L. Arnaud, P. Lamontagne, E. Petitprez, R. Galand","doi":"10.1109/IRPS.2011.5784571","DOIUrl":null,"url":null,"abstract":"We show that Cu interconnect lifetime is increased, at least by a factor of 2, with an electromigration (EM) pre-stress. Stress modeling shows that EM induced void at one line end creates compressive stress at the other end. High compressive stress induces an incubation time before EM starts. Incubation time is proportional to the amount of compressive stress induced.","PeriodicalId":242672,"journal":{"name":"2011 International Reliability Physics Symposium","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Improving lifetime of Cu interconnects with adding compressive stress at cathode end\",\"authors\":\"L. Arnaud, P. Lamontagne, E. Petitprez, R. Galand\",\"doi\":\"10.1109/IRPS.2011.5784571\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We show that Cu interconnect lifetime is increased, at least by a factor of 2, with an electromigration (EM) pre-stress. Stress modeling shows that EM induced void at one line end creates compressive stress at the other end. High compressive stress induces an incubation time before EM starts. Incubation time is proportional to the amount of compressive stress induced.\",\"PeriodicalId\":242672,\"journal\":{\"name\":\"2011 International Reliability Physics Symposium\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-04-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.2011.5784571\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2011.5784571","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Improving lifetime of Cu interconnects with adding compressive stress at cathode end
We show that Cu interconnect lifetime is increased, at least by a factor of 2, with an electromigration (EM) pre-stress. Stress modeling shows that EM induced void at one line end creates compressive stress at the other end. High compressive stress induces an incubation time before EM starts. Incubation time is proportional to the amount of compressive stress induced.
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