Kidan Bae, M. Jin, H. Lim, Lira Hwang, Dongseok Shin, Junekyun Park, Jin-Chul Heo, Jongho Lee, Jinho Do, Ilchan Bae, Chul-Hee Jeon, Jongwoo Park
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Behaviors and physical degradation of HfSiON MOSFET linked to strained CESL performance booster
The propensity of HCI and BTI degradation of HfSiON MOSFET on strained SiN-CESL performance booster is meticulously investigated. It is found that HCI and BTI lifetime of HfO based n/p MOSFET devices depend on hydrogen, initial Dit and plasma charging inherently related to the stress type of CESL fabricated with PECVD. In case for tensile CESL, n/p MOSFET devices far exceed reliability targets for both HCI and BTI. While compressive CESL on n/p MOSFET drastically depresses HCI and BTI lifetime.
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