{"title":"Analysis of thin chrome on photomasks","authors":"Robert Kostelak","doi":"10.1117/12.3011918","DOIUrl":"https://doi.org/10.1117/12.3011918","url":null,"abstract":"\"Thin chrome\" is a major cause for the rejection of photomasks during their fabrication process. This paper will characterize this phenomenon and identify a working solution to the problem. The thinned regions in chrome are characterized by -100 |xm wide isolated depressions which are detected by visual inspection under an optical microscope. Analysis of the chromium surface using AES and EDXA showed no chemical contamination or inclusions which could be responsible for the thinned chrome. Thin chrome is observed more frequently on plates from Vendor one than from Vendor two. Observations of the removal of the chromium from the glass substrate suggest that the stress gradient within the Vendor one chromium is greater than the Vendor two chromium. ESC A revealed two distinct chemical state of nitrogen present within Vendor l’s chromium film. However, using TEM, the grain structure of chromium from both Vendor one and Vendor two was found to be fine and uniform. The occurrence of thin chrome has been associated with the presence of chromic acid in the resist stripping solution. An alternative sulfuric acid: hydrogen peroxide solution can successfully strip e-beam resist without attacking the chromium mask.","PeriodicalId":235881,"journal":{"name":"Photomask Technology","volume":"105 1","pages":"1281008 - 1281008-23"},"PeriodicalIF":0.0,"publicationDate":"2023-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139320197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. E. Novembre, L. M. Kowalski, J. Frackoviak, D. A. Mixon, L. F. Thompson
{"title":"GMC: a negative acting resist used in the fabrication of chromium photomasks","authors":"A. E. Novembre, L. M. Kowalski, J. Frackoviak, D. A. Mixon, L. F. Thompson","doi":"10.1117/12.3011932","DOIUrl":"https://doi.org/10.1117/12.3011932","url":null,"abstract":"GMC is a random amorphous co-polymer of glycidyl methacrylate and 3- chlorostyrene. The material functions as a negative acting (cross-linking type) electron beam resist. Its sensitivity, defined as the dose necessary to gel 50% of the initial film thickness (Dq0.5), is 1.5 and 3.1 uC/cm2 @ 10 and 20 kV, respectively. No post exposure curing is required for device codes that allow line-width tolerances of > +/- 0.10 um. A methodology has been developed for determining a thermodynamically marginal developer (solvent) which minimizes swelling of the defined features, and improves process control associated with the spray/spin development step. The use of this method has led to an improvement in resolution over that obtained with conventional 2-component developers. Vertical 0.75 um line and space patterns are routinely delineated, and features in the 0.5 um range can be obtained. The material exhibits enhanced dry etching resistance when compared to methacrylate based (OOP, PGMA) negative resists, and is compatible with both wet and dry etching methods utilized in the patterning of the chromium layer. Production scale quantities are not routinely produced. A batch to batch comparison of the critical molecular and lithographic properties indicates deviations of < 5 percent. Statistical data derived from product related IX photomasks reveals an average calculated line width uniformity (3 sigma) and line edge roughness (6 sigma) of 0.027 um and 0.064 um, respectively. This represents 100% improvement in feature size quality, and control over COP, and is equivalent to that observed with PBS patterned masks. Pinhole defects are virtually nonexistent, and defect densities under 0.2/cm2 are observed.","PeriodicalId":235881,"journal":{"name":"Photomask Technology","volume":"92 1","pages":"1281108 - 1281108-17"},"PeriodicalIF":0.0,"publicationDate":"2023-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139149187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Statistical process control in the mask shop","authors":"Lois B. Pritchard","doi":"10.1117/12.3011922","DOIUrl":"https://doi.org/10.1117/12.3011922","url":null,"abstract":"Our industry has been hit hard by foreign competition, and it's clear we have to do something to shape up, and fast! We need data, but somehow the reams and reams of data we're known for just isn't enough anymore. Our usual methods of collecting, crunching and reporting the numbers do not do the job of improving and maintaining quality in production. We must improve quality, reduce cycle time, improve yields. It's a matter of survival. The banner some of our managers have been waving is Statistical Process Control, so it's time we learned about it and gave it a try. Statistical process control charts lend themselves quite readily to factory situations, where product may be sampled and measurements and means of the same variable plotted for each data point. A photomask shop doesn't quite work that way. Typically, the number of parts is too low for a sampling scheme to be appropriate, especially in an ebeam shop. Every part is unique, every part is measured for CD's, defects, etc., not just a sample part, and the CD required is different for every part. This paper provides a brief descriptive overview of Statistical Process Control and details the procedures appropriate for a photomask operation. The information and examples are given such that someone with little or no background in statistics may implement SPC procedures in his own mask shop, for the purpose of product quality definition and improvement.","PeriodicalId":235881,"journal":{"name":"Photomask Technology","volume":"130 1","pages":"128100B - 128100B-24"},"PeriodicalIF":0.0,"publicationDate":"2023-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139320011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Automating mask shop data preparation","authors":"Todd E. Pegelow","doi":"10.1117/12.3011923","DOIUrl":"https://doi.org/10.1117/12.3011923","url":null,"abstract":"In the late 1970's and early 1980's it became apparent that soft-contact and projection aligners were not going to produce acceptable yields for the one- to three-micron technologies that would be demanded by the mid 1980's. Projection step-and-repeat systems appeared to be the preferred method of wafer imaging, with non-optically generated (e-beam) reticles providing the best masks. Compounded by denser, more complicated circuit designs, this new wave of technology demanded new philosophies for data preparation. With mean-time-between-failure on optical pattern generators shorter than the time it would take to generate some of these new masks, it also became obvious that pattern generators were not going to handle any of the newer technologies. Mask shops were soon faced with the problems associated with multiple tooling techniques, the different data preparation techniques required to support each, as well as the responsibility of maintaining the existing tooling on the older systems.","PeriodicalId":235881,"journal":{"name":"Photomask Technology","volume":"1 1","pages":"128100C - 128100C-10"},"PeriodicalIF":0.0,"publicationDate":"2023-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139319920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Stewart Lyle, Ruben Rodriguez, Patrick M. Troccolo
{"title":"Improving Nikon XY-2i performance","authors":"Stewart Lyle, Ruben Rodriguez, Patrick M. Troccolo","doi":"10.1117/12.3011914","DOIUrl":"https://doi.org/10.1117/12.3011914","url":null,"abstract":"Due to the need for better repeatability in mask registration measurement, Intel Corporation instigated a joint project with Nikon Precision Inc attempting to improve the performance of their new XY-2I to +/- 0.05μ over lOOmn. The empirical experimentation focused on controlling and/or more accurately monitoring the errors associated with interferometer compensation for air and mask temperature, temperature differences between the X and Y portions of the interferometer, plate temperature non-uniformity, and incorrect plate climatization. Flouroptic temperature probes monitoring plate and X/Y interferometer temperatures showed that installation of curtains and precisely-placed fans, better placement of Nikon air and mask temperature sensors, and proper plate climatization eliminated X/Y interferometer temperature differences, improved plate temperature stability and uniformity, and greatly reduced the air and plate temperature measurement errors. Long-term repeatability and residual-orthogonality measurements both showed large improvements with the range of orthogonality fluctuations ^ +/- 0.14” of arc and long-term repeatability ^ +/- 0.06μ over 100mm. These results indicate that with a few simple and inexpensive modifications, XY-2I performance improvement is possible.","PeriodicalId":235881,"journal":{"name":"Photomask Technology","volume":"28 1","pages":"1281004 - 1281004-31"},"PeriodicalIF":0.0,"publicationDate":"2023-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139319928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Masataka Mamizuka, Teruaki Kawajiri, Koji Suzuki, Yusuke Teramoto, T. Shirai, S. Morimoto, Hidenori Watanabe, A. Nagano, Daisuke Yajima, N. Ashizawa, Kazuya Aoki, Yoshihiko Sato
{"title":"High-brightness LDP source","authors":"Masataka Mamizuka, Teruaki Kawajiri, Koji Suzuki, Yusuke Teramoto, T. Shirai, S. Morimoto, Hidenori Watanabe, A. Nagano, Daisuke Yajima, N. Ashizawa, Kazuya Aoki, Yoshihiko Sato","doi":"10.1117/12.2687785","DOIUrl":"https://doi.org/10.1117/12.2687785","url":null,"abstract":"The Laser-assisted Discharge-produced Plasma (LDP) EUV source is a system to generate EUV from discharged plasma triggered by laser on one electrode disc which is coated by tin film. The source has been proven as a highly reliable light source in EUVL high volume production. Also, LDP EUV source enables to generate high brightness with relatively larger EUV plasma, which benefits space stability as well as relatively larger plasma power. In this session, the following items will be presented. (1) LDP EUV source configuration and operation sequence. (2) LDP EUV source key performance (3) Stability Improvement (4) Reliability improvement. (5) Sample exposure application","PeriodicalId":235881,"journal":{"name":"Photomask Technology","volume":"26 1","pages":"1275012 - 1275012-9"},"PeriodicalIF":0.0,"publicationDate":"2023-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139334081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Furuya, Kazuya Aoki, Y. Teramoto, T. Shirai, S. Morimoto, Hirdenori Watanabe, A. Nagano, D. Yajima, N. Ashizawa, Yoshihiko Sato
{"title":"High-brightness LDP source for EUVL mask inspection","authors":"R. Furuya, Kazuya Aoki, Y. Teramoto, T. Shirai, S. Morimoto, Hirdenori Watanabe, A. Nagano, D. Yajima, N. Ashizawa, Yoshihiko Sato","doi":"10.1117/12.2641777","DOIUrl":"https://doi.org/10.1117/12.2641777","url":null,"abstract":"The Laser-assisted Discharge-produced Plasma (LDP) EUV source has been developed as a light source for actinic mask inspection and is currently deployed in the field. As the EUVL process is used more in the mass-production process, the requirement for EUV source for mask inspection is required more. LDP source enables the generation of high brightness with relatively large EUV plasma to fulfill these requirements. Ushio LDP source has overcome various issues specialized from LDP source and realized high reliability 24/7 based operation with high brightness maintained. In this paper, we address the followings: (1) LDP source configuration and its monitoring system, (2) Features of LDP source for inspection purposes, (3) Recent availability in the field, (4) Improvement of source stability and cleanliness, and (5) Roadmap of source availability.","PeriodicalId":235881,"journal":{"name":"Photomask Technology","volume":"22 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123018976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Chandramouli, B. Liu, Z. Alberti, F. Abboud, G. Hochleitner, W. Wroczewski, S. Kuhn, C. Klein, E. Platzgummer
{"title":"Multibeam mask requirements for advanced EUV patterning","authors":"M. Chandramouli, B. Liu, Z. Alberti, F. Abboud, G. Hochleitner, W. Wroczewski, S. Kuhn, C. Klein, E. Platzgummer","doi":"10.1117/12.2645895","DOIUrl":"https://doi.org/10.1117/12.2645895","url":null,"abstract":"Multibeam mask writers (MBMW) from IMS Nanofabrication developed in the last decade are currently being used for leading edge mask patterning. The ability to utilize low sensitivity resists required to pattern complex mask patterns with good edge placement control made MBMW the tool of choice for leading edge extreme ultraviolet (EUV) mask patterning. The next generation of High-NA EUV masks will require smaller features, more complex figures and reduction of edge placement errors. These requirements may exceed the capability of the current MBMW tools. Recently IMS announced the next generation MBMW tools to address this challenge. This paper will explore the effectiveness of the proposed improvements on addressing High-NA EUV mask patterning challenges.","PeriodicalId":235881,"journal":{"name":"Photomask Technology","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116198479","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"EUV optics at ZEISS: status and outlook","authors":"B. Bilski, Dirk Juergens, Paul Graeupner","doi":"10.1117/12.2645875","DOIUrl":"https://doi.org/10.1117/12.2645875","url":null,"abstract":"In recent years the promise of EUV lithography became a high-volume-manufacturing reality. With already more than 160 EUV scanners in the field worldwide (and counting!), EUV lithography has now a solid footing in market and is currently the main enabler for the latest generations of chips we all know and use. To enable the future generations of chips, with even smaller feature sizes than what we currently have on the market, ZEISS and ASML are developing a new generation of EUV tools, where the numerical aperture (NA) of their optics is increased from the current 0.33 to 0.55. These high-NA tools will allow the shrink prescribed by the Moore's Law to continue well into this decade, by allowing the lithographers to print 8nm half-pitch in a single exposure. In this presentation we will remind briefly on high-NA optics concepts as compared to its 0.33-NA predecessor. We will give insight into how advanced the current production status at ZEISS is: not only into mirror surface polishing, coating, metrology, but also mirror handling and integration as well as shipment. Moreover, besides what happens in high-NA program, you will also see the current status and ongoing improvements to 0.33-NA optics.","PeriodicalId":235881,"journal":{"name":"Photomask Technology","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132519880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Nakano, Ryohei Gorai, Yuto Yamagata, D. Miyawaki, Kazunori Seki
{"title":"Novel high-k mask absorber for next generation EUV lithography","authors":"H. Nakano, Ryohei Gorai, Yuto Yamagata, D. Miyawaki, Kazunori Seki","doi":"10.1117/12.2641289","DOIUrl":"https://doi.org/10.1117/12.2641289","url":null,"abstract":"Currently various materials are being tested as new EUV mask absorber for next-generation EUV lithography. The materials can roughly be divided into two groups: low-n and high-k. In order to determine what material to use, various properties such as wafer printability and mask process needs to be considered. In this work, wafer printability of low-n and high-k material was compared with current tantalum based conventional absorber by simulation. Material chosen from the n & k value showing promising results in the simulation where tested for durability in mask usage condition. Also, the chosen material was patterned with conventional tool applied for current photomask process, testing the etchability and resolution with temporal process used for initial testing.","PeriodicalId":235881,"journal":{"name":"Photomask Technology","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133013998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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